Market Overview:
The global 3D NAND Memory market is expected to grow at a CAGR of xx% during the forecast period from 2018 to 2030. The growth in this market can be attributed to the increasing demand for 3D NAND Memory from various applications, such as consumer electronics, mass storage, industrial, aerospace & defence and telecommunication. Additionally, the growing demand for high-capacity storage devices is also contributing to the growth of this market. However, the high cost associated with 3D NAND Memory products may restrain its adoption in certain applications. Some of the major players operating in this market are Samsung Electronics Co., Ltd.
Product Definition:
3D NAND Memory is a type of non-volatile storage that stacks memory cells on top of each other, like a skyscraper. This allows for more storage capacity in less space. 3D NAND Memory is important because it allows for smaller and more efficient devices to be manufactured.
Single-level Cell (SLC):
Single-level cell (SLC) is a type of flash memory. It consists of an insulated gate dielectric substrate, a floating gate above the insulation and a control gate below the insulation. The cell has no electrical connection between the source and drain electrodes.
Multi-level Cell (MLC):
Multi-level cell (MLC) is a type of flash memory, which consists of multiple levels of electrically floating gates. Each level gate can store one bit of information. The number of levels in an MLC module is determined by the size and type parameters as well as depends on the fabrication process used for manufacturing the device.
Application Insights:
The consumer electronics segment accounted for the largest market share in 2017 and is expected to continue its dominance over the forecast period. The high storage density offered by 3D NAND memory chipsets makes them suitable for use in electronic devices, especially mobile phones. The growing adoption of smartphones is anticipated to have a positive impact on product demand over the forecast period.
North America was estimated to be home to more than half of all 3D NAND flash manufacturers as well as key players in other industries such as semiconductors, hard disk drives and displays. This region¢â‚¬â„¢s dominant position can be attributed primarily to factors such as tax incentives offered by various governments on investments and research & development activities carried out at public-private partnerships (PPP). These factors are expected fuel industry growth from 2018 through 2030.
Regional Analysis:
The North American regional market dominated the global 3D NAND memory industry in 2016 and is anticipated to continue its dominance over the forecast period. The growth can be attributed to increasing demand for high-capacity storage devices, rising adoption of consumer electronics with improved performance, and growing demand for smartphones and tablets with enhanced data storage capacity.
The Asia Pacific regional market is projected to witness significant growth over the next eight years owing to rapid technological advancements coupled with increased spending on electronic devices by consumers & enterprises in this region. Furthermore, a large number of semiconductor manufacturers are based in China which has resulted in high product penetration across this region as well as others such as South Korea & Japan. This has led to an increase in overall revenue generation within APAC during the forecast period from 2017 To 2030 (USD Million).
Europe also held a considerable share within global revenue generation owing to early technology adoption by key players such as Samsung Electronics Co., Ltd.
Growth Factors:
- Increasing demand for storage in data centers and consumer electronics
- Rapid growth of the Internet of Things (IoT) market
- Proliferation of artificial intelligence and machine learning applications
- Growing demand for cloud-based storage services
- Emergence of new memory technologies
Scope Of The Report
Report Attributes
Report Details
Report Title
3D NAND Memory Market Research Report
By Type
Single-level Cell (SLC), Multi-level Cell (MLC), Triple-level Cell (TLC)
By Application
Consumer Electronics, Mass Storage, Industrial, Aerospace & Defence, Telecommunication, Others
By Companies
Samsung Electronics, Toshiba/SanDisk, SK Hynix Semiconductor, Micron Technology, Intel Corporation, SK Hynix
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
165
Number of Tables & Figures
116
Customization Available
Yes, the report can be customized as per your need.
Global 3D NAND Memory Market Report Segments:
The global 3D NAND Memory market is segmented on the basis of:
Types
Single-level Cell (SLC), Multi-level Cell (MLC), Triple-level Cell (TLC)
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Consumer Electronics, Mass Storage, Industrial, Aerospace & Defence, Telecommunication, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Samsung Electronics
- Toshiba/SanDisk
- SK Hynix Semiconductor
- Micron Technology
- Intel Corporation
- SK Hynix
Highlights of The 3D NAND Memory Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- Single-level Cell (SLC)
- Multi-level Cell (MLC)
- Triple-level Cell (TLC)
- By Application:
- Consumer Electronics
- Mass Storage
- Industrial
- Aerospace & Defence
- Telecommunication
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the 3D NAND Memory Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
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- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
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8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
3D NAND Memory is a type of flash memory that uses three layers of cells. The top layer stores the data, the middle layer stores the error correction code, and the bottom layer stores the actual data. This allows for more storage space per chip than 2D NAND Memory.
Some of the key players operating in the 3d nand memory market are Samsung Electronics, Toshiba/SanDisk, SK Hynix Semiconductor, Micron Technology, Intel Corporation, SK Hynix.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 3D NAND Memory Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 3D NAND Memory Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 3D NAND Memory Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the 3D NAND Memory Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global 3D NAND Memory Market Size & Forecast, 2018-2028
4.5.1 3D NAND Memory Market Size and Y-o-Y Growth
4.5.2 3D NAND Memory Market Absolute $ Opportunity
Chapter 5 Global 3D NAND Memory Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 3D NAND Memory Market Size Forecast by Type
5.2.1 Single-level Cell (SLC)
5.2.2 Multi-level Cell (MLC)
5.2.3 Triple-level Cell (TLC)
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global 3D NAND Memory Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 3D NAND Memory Market Size Forecast by Applications
6.2.1 Consumer Electronics
6.2.2 Mass Storage
6.2.3 Industrial
6.2.4 Aerospace & Defence
6.2.5 Telecommunication
6.2.6 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global 3D NAND Memory Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 3D NAND Memory Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America 3D NAND Memory Analysis and Forecast
9.1 Introduction
9.2 North America 3D NAND Memory Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America 3D NAND Memory Market Size Forecast by Type
9.6.1 Single-level Cell (SLC)
9.6.2 Multi-level Cell (MLC)
9.6.3 Triple-level Cell (TLC)
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America 3D NAND Memory Market Size Forecast by Applications
9.10.1 Consumer Electronics
9.10.2 Mass Storage
9.10.3 Industrial
9.10.4 Aerospace & Defence
9.10.5 Telecommunication
9.10.6 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe 3D NAND Memory Analysis and Forecast
10.1 Introduction
10.2 Europe 3D NAND Memory Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe 3D NAND Memory Market Size Forecast by Type
10.6.1 Single-level Cell (SLC)
10.6.2 Multi-level Cell (MLC)
10.6.3 Triple-level Cell (TLC)
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe 3D NAND Memory Market Size Forecast by Applications
10.10.1 Consumer Electronics
10.10.2 Mass Storage
10.10.3 Industrial
10.10.4 Aerospace & Defence
10.10.5 Telecommunication
10.10.6 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific 3D NAND Memory Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific 3D NAND Memory Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific 3D NAND Memory Market Size Forecast by Type
11.6.1 Single-level Cell (SLC)
11.6.2 Multi-level Cell (MLC)
11.6.3 Triple-level Cell (TLC)
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific 3D NAND Memory Market Size Forecast by Applications
11.10.1 Consumer Electronics
11.10.2 Mass Storage
11.10.3 Industrial
11.10.4 Aerospace & Defence
11.10.5 Telecommunication
11.10.6 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America 3D NAND Memory Analysis and Forecast
12.1 Introduction
12.2 Latin America 3D NAND Memory Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America 3D NAND Memory Market Size Forecast by Type
12.6.1 Single-level Cell (SLC)
12.6.2 Multi-level Cell (MLC)
12.6.3 Triple-level Cell (TLC)
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America 3D NAND Memory Market Size Forecast by Applications
12.10.1 Consumer Electronics
12.10.2 Mass Storage
12.10.3 Industrial
12.10.4 Aerospace & Defence
12.10.5 Telecommunication
12.10.6 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) 3D NAND Memory Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) 3D NAND Memory Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) 3D NAND Memory Market Size Forecast by Type
13.6.1 Single-level Cell (SLC)
13.6.2 Multi-level Cell (MLC)
13.6.3 Triple-level Cell (TLC)
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) 3D NAND Memory Market Size Forecast by Applications
13.10.1 Consumer Electronics
13.10.2 Mass Storage
13.10.3 Industrial
13.10.4 Aerospace & Defence
13.10.5 Telecommunication
13.10.6 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 3D NAND Memory Market: Competitive Dashboard
14.2 Global 3D NAND Memory Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Samsung Electronics
14.3.2 Toshiba/SanDisk
14.3.3 SK Hynix Semiconductor
14.3.4 Micron Technology
14.3.5 Intel Corporation
14.3.6 SK Hynix
