Market Overview:
The global discrete SiC power devices market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The growth in this market can be attributed to the increasing demand for energy-efficient and high-power electronics devices. Additionally, the growing adoption of SiC power devices in various applications such as rail, smart grid, electric vehicle, communication power and others is also contributing to the growth of this market. However, the high cost associated with these devices may restrain their adoption in some applications. Based on type, transistor is expected to account for a major share of the global discrete SiC power devices market during the forecast period from 2018 to 2030. This can be attributed to its wide usage across various applications such as rail transportation systems and smart grids owing to its superior performance characteristics as compared with other types of semiconductor materials used in these applications.
Product Definition:
Discrete SiC Power Devices are high-power, silicon-carbide (SiC) devices that offer a number of advantages over traditional silicon devices, including higher efficiency, lower weight and size, and improved thermal performance. They are used in a variety of applications where high power density is required, such as electric vehicles (EVs), aerospace systems, and data centers.
Transistor:
Transistor is a switching device which controls the electrical current from one path to another by means of small signal. It can be seen as an on-off button for electricity. Transistors are used in almost all electronic devices such as computers, mobile phones, televisions and even toasters (yes, they are present in toaster too).
Diodes:
Diodes are electronic components that protect the circuit from damage by conducting current away from the point of fault. The most common types of diodes used in modern electronic devices are silicon controlled rectifiers (SCRs) and zener diodes. Diodes have applications in power devices as well, where they function as a voltage regulator or an automatic switch-on/off device depending upon the application requirements.
Application Insights:
The rail application segment accounted for the largest share of over 30.0% in 2017 and is projected to witness significant growth over the forecast period. The rising demand for electric and diesel locomotives coupled with SiC's ability to provide high power density, low weight, excellent thermal management & high reliability are expected to drive the product demand in this segment.
SiC discrete power devices are used as switching elements in electric vehicle chargers owing to their ability to handle large current densities with ease and efficiency. They also have a low on-state resistance which makes them ideal choices for charger applications where energy transfer occurs through direct Current (DC) magnetic fields between conductors at a rate of up againsiting vehicles¢â‚¬â„¢ charge ports.
Regional Analysis:
Asia Pacific dominated the global discrete semiconductor power devices market in 2016 and is expected to continue its dominance over the forecast period. The region’s growth can be attributed to rising investments in infrastructure development, which has led to an increase in consumer electronics demand. China is a major contributor towards regional growth owing to its large population and rapid industrialization.
The European market for discrete semiconductor power devices was valued at USD X million in 2016 and is anticipated to grow at a CAGR of XX% from 2017 till 2030 owing high consumption of energy storage products such as batteries used for storing energy during peak hours for subsequent usage during off-peak hours thereby reducing electricity cost. Rising adoption of electric vehicles along with stringent emission norms set by various governments across Europe are also driving industry growth over the projected period.
Growth Factors:
- Increasing demand for high-efficiency and reliable power devices in various end-use applications
- Rising penetration of SiC power devices in the automotive sector
- Growing demand for semiconductor components in data centers and telecommunications infrastructure
- Proliferation of next-generation electric vehicles and renewable energy systems
- Technological advancements and innovations in SiC power device manufacturing
Scope Of The Report
Report Attributes
Report Details
Report Title
Discrete SiC Power Devices Market Research Report
By Type
Transistor, Diodes, Thyristor
By Application
Rail, Smart Grid, Electric Vehicle, Communication Power, Others
By Companies
ROHM, Wolfspeed, Mitsubishi Electric, STMicroelectronics, InfineonTechnologies, Littelfuse, Ascatron, Fuji Electric Co., Ltd., Toshiba, MicroSemi (Microchip), GeneSiC Semiconductor Inc., Global Power Technology Co., Ltd., Inc., Shenzhen BASiC Semiconductor LTD., InventChip Technology Co., Ltd., ON Semiconductor, Yangzhou Yangjie Electronic Technology Co., Ltd.
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
233
Number of Tables & Figures
164
Customization Available
Yes, the report can be customized as per your need.
Global Discrete SiC Power Devices Market Report Segments:
The global Discrete SiC Power Devices market is segmented on the basis of:
Types
Transistor, Diodes, Thyristor
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Rail, Smart Grid, Electric Vehicle, Communication Power, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- ROHM
- Wolfspeed
- Mitsubishi Electric
- STMicroelectronics
- InfineonTechnologies
- Littelfuse
- Ascatron
- Fuji Electric Co., Ltd.
- Toshiba
- MicroSemi (Microchip)
- GeneSiC Semiconductor Inc.
- Global Power Technology Co., Ltd., Inc.
- Shenzhen BASiC Semiconductor LTD.
- InventChip Technology Co., Ltd.
- ON Semiconductor
- Yangzhou Yangjie Electronic Technology Co., Ltd.
Highlights of The Discrete SiC Power Devices Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- Transistor
- Diodes
- Thyristor
- By Application:
- Rail
- Smart Grid
- Electric Vehicle
- Communication Power
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Discrete SiC Power Devices Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
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8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
Discrete SiC power devices are semiconductor devices that use a silicon-carbide substrate as the active layer. These devices can be used to create high-power switches, rectifiers, and other components.
Some of the major players in the discrete sic power devices market are ROHM, Wolfspeed, Mitsubishi Electric, STMicroelectronics, InfineonTechnologies, Littelfuse, Ascatron, Fuji Electric Co., Ltd., Toshiba, MicroSemi (Microchip), GeneSiC Semiconductor Inc., Global Power Technology Co., Ltd., Inc., Shenzhen BASiC Semiconductor LTD., InventChip Technology Co., Ltd., ON Semiconductor, Yangzhou Yangjie Electronic Technology Co., Ltd..
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Discrete SiC Power Devices Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 Discrete SiC Power Devices Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 Discrete SiC Power Devices Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the Discrete SiC Power Devices Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global Discrete SiC Power Devices Market Size & Forecast, 2018-2028
4.5.1 Discrete SiC Power Devices Market Size and Y-o-Y Growth
4.5.2 Discrete SiC Power Devices Market Absolute $ Opportunity
Chapter 5 Global Discrete SiC Power Devices Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Discrete SiC Power Devices Market Size Forecast by Type
5.2.1 Transistor
5.2.2 Diodes
5.2.3 Thyristor
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Discrete SiC Power Devices Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Discrete SiC Power Devices Market Size Forecast by Applications
6.2.1 Rail
6.2.2 Smart Grid
6.2.3 Electric Vehicle
6.2.4 Communication Power
6.2.5 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Discrete SiC Power Devices Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Discrete SiC Power Devices Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Discrete SiC Power Devices Analysis and Forecast
9.1 Introduction
9.2 North America Discrete SiC Power Devices Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Discrete SiC Power Devices Market Size Forecast by Type
9.6.1 Transistor
9.6.2 Diodes
9.6.3 Thyristor
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Discrete SiC Power Devices Market Size Forecast by Applications
9.10.1 Rail
9.10.2 Smart Grid
9.10.3 Electric Vehicle
9.10.4 Communication Power
9.10.5 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Discrete SiC Power Devices Analysis and Forecast
10.1 Introduction
10.2 Europe Discrete SiC Power Devices Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Discrete SiC Power Devices Market Size Forecast by Type
10.6.1 Transistor
10.6.2 Diodes
10.6.3 Thyristor
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Discrete SiC Power Devices Market Size Forecast by Applications
10.10.1 Rail
10.10.2 Smart Grid
10.10.3 Electric Vehicle
10.10.4 Communication Power
10.10.5 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Discrete SiC Power Devices Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Discrete SiC Power Devices Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Discrete SiC Power Devices Market Size Forecast by Type
11.6.1 Transistor
11.6.2 Diodes
11.6.3 Thyristor
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Discrete SiC Power Devices Market Size Forecast by Applications
11.10.1 Rail
11.10.2 Smart Grid
11.10.3 Electric Vehicle
11.10.4 Communication Power
11.10.5 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Discrete SiC Power Devices Analysis and Forecast
12.1 Introduction
12.2 Latin America Discrete SiC Power Devices Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Discrete SiC Power Devices Market Size Forecast by Type
12.6.1 Transistor
12.6.2 Diodes
12.6.3 Thyristor
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Discrete SiC Power Devices Market Size Forecast by Applications
12.10.1 Rail
12.10.2 Smart Grid
12.10.3 Electric Vehicle
12.10.4 Communication Power
12.10.5 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Discrete SiC Power Devices Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Discrete SiC Power Devices Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Discrete SiC Power Devices Market Size Forecast by Type
13.6.1 Transistor
13.6.2 Diodes
13.6.3 Thyristor
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Discrete SiC Power Devices Market Size Forecast by Applications
13.10.1 Rail
13.10.2 Smart Grid
13.10.3 Electric Vehicle
13.10.4 Communication Power
13.10.5 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Discrete SiC Power Devices Market: Competitive Dashboard
14.2 Global Discrete SiC Power Devices Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 ROHM
14.3.2 Wolfspeed
14.3.3 Mitsubishi Electric
14.3.4 STMicroelectronics
14.3.5 InfineonTechnologies
14.3.6 Littelfuse
14.3.7 Ascatron
14.3.8 Fuji Electric Co., Ltd.
14.3.9 Toshiba
14.3.10 MicroSemi (Microchip)
14.3.11 GeneSiC Semiconductor Inc.
14.3.12 Global Power Technology Co., Ltd., Inc.
14.3.13 Shenzhen BASiC Semiconductor LTD.
14.3.14 InventChip Technology Co., Ltd.
14.3.15 ON Semiconductor
14.3.16 Yangzhou Yangjie Electronic Technology Co., Ltd.
