Market Overview:
The global emerging non-volatile memory market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The market growth can be attributed to the increasing demand for advanced storage solutions across various applications. Additionally, the growing trend of miniaturization in electronic devices is also fueling the demand for non-volatile memory solutions. The global emerging non-volatile memory market by type is segmented into 3D NAND, Magnetoresistive Random Access Memory (MRAM), Spin-Transfer Torque Random Access Memory (STT-RAM), Ferroelectric RAM (FRAM), Resistive Random Access Memory (RERAM), 3D Xpoint, Nano RAM, and others. The 3D NAND segment is expected to hold the largest share of the global market during the forecast period owing to its high capacity and low power consumption characteristics. Additionally, rising demand for advanced storage solutions in data centers is also contributing to the growth of this segment. The global emerging non-volatile memory market by application is divided into military & aerospace, industrial, telecommunication, energy & power systems healthcare agricultural retail sectors among others.
Product Definition:
Emerging non-volatile memory (ENVM) is a type of computer storage that retains data even when the power is turned off. ENVM is used to store persistent data, which allows devices to retain information after a reboot or unexpected power loss. ENVM can also improve system performance and security by caching frequently accessed files and blocking unauthorized access to sensitive data.
3D NAND:
3D NAND is a type of flash memory that uses stacking technology to store data vertically in multiple layers. Stacking involves using charge trap flash (CTF) technology, which is capable of storing more data in less space and provides faster read/write performance as compared to 2D or planar NAND. 3D NAND was first commercialized by Samsung Electronics Co., Ltd.
Magnetoresistive Random Access Memory (MRAM):
MRAM is a type of NVM that uses magnetic storage. It offers fast read and write access times, higher energy efficiency, and low power consumption as compared to DRAMs. MRAM stores data by using the principle of Magneto-Resistive random access memory (MR). Data is stored in the form of magnetization wavefronts within the thin film material on a substrate.
Application Insights:
The global emerging non-volatile memory market is segmented by application into military & aerospace, industrial, telecommunication, energy & power, healthcare and agricultural. The military & aerospace sector accounted for the largest revenue share in 2017 owing to the growing demand from defense applications. Emerging non-volatile memory offers various advantages over traditional flash storage devices including high endurance (100x), low power consumption (0.5W/GB) and higher data density (1Tbit/in2). These characteristics make them suitable for use in numerous consumer electronics products as well as in-vehicle infotainment systems that require a highly durable solution.
Emerging NAND technology has been gaining traction since its introduction several years ago due to its cost effectiveness and high performance capabilities across all industry applications thus expected to drive the product demand over the forecast period of time. Furthermore, increasing adoption of cloud computing services has led many companies such as HP Inc., Microsoft Corporation., Amazon Web Services LLC.
Regional Analysis:
The market in Asia Pacific is expected to grow at a significant rate over the forecast period owing to the presence of key players such as Toshiba, Samsung Electronics, SK Hynix, and Micron Technology. The increasing demand for smartphones and tablets coupled with rising investments by companies in developing new technologies is also anticipated to drive the regional market growth.
Increasing demand for high-capacity storage devices along with rapid development of data centers across various industries has led manufacturers in this region to increase their production capacities. For instance, Wistron Corporation announced its plan of expanding its manufacturing capacity by 40% from 200 thousand square meters currently occupied till 300 thousand square meters at an investment cost of USD X million till 2019 end. Such steps are likely to boost product penetration across various applications thereby driving overall regional growth over the next eight years.
Growth Factors:
- Increasing demand for faster, more reliable and efficient data storage solutions
- Growing trend of miniaturization in electronics devices
- Proliferation of big data and the need for fast, high-capacity storage solutions
- Development of new non-volatile memory technologies
- Rising demand from the automotive industry
Scope Of The Report
Report Attributes
Report Details
Report Title
Emerging Non-Volatile Memory Market Research Report
By Type
3D NAND, Magnetoresistive Random Access Memory (MRAM), Spin-Transfer Torque Random Access Memory (STT-RAM), Ferroelectric RAM (FRAM), Resistive Random Access Memory (RERAM), 3D Xpoint, Nano RAM, Others
By Application
Military & Aerospace, Industrial, Telecommunication, Energy & Power, Healthcare, Agricultural, Retail
By Companies
Samsung Electronics Co., Ltd. (South Korea), Toshiba Corp. (Japan), Micron Technology, Inc. (U.S.), SK Hynix, Inc. (South Korea), Western Digital Corp. (U.S.), Adesto Technologies Corp. (U.S.), Intel Corporation. (U.S.), Microchip Technology, Inc. (U.S.), Fujitsu Ltd. (Japan), Everspin Technologies, Inc. (U.S.), Samsung Electronics Co., Ltd. (South Korea), Crossbar Inc. (U.S.), Nantero Inc. (U.S.), Kilopass Technology Inc. (U.S.)
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
171
Number of Tables & Figures
120
Customization Available
Yes, the report can be customized as per your need.
Global Emerging Non-Volatile Memory Market Report Segments:
The global Emerging Non-Volatile Memory market is segmented on the basis of:
Types
3D NAND, Magnetoresistive Random Access Memory (MRAM), Spin-Transfer Torque Random Access Memory (STT-RAM), Ferroelectric RAM (FRAM), Resistive Random Access Memory (RERAM), 3D Xpoint, Nano RAM, Others
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Military & Aerospace, Industrial, Telecommunication, Energy & Power, Healthcare, Agricultural, Retail
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Samsung Electronics Co., Ltd. (South Korea)
- Toshiba Corp. (Japan)
- Micron Technology, Inc. (U.S.)
- SK Hynix, Inc. (South Korea)
- Western Digital Corp. (U.S.)
- Adesto Technologies Corp. (U.S.)
- Intel Corporation. (U.S.)
- Microchip Technology, Inc. (U.S.)
- Fujitsu Ltd. (Japan)
- Everspin Technologies, Inc. (U.S.)
- Samsung Electronics Co., Ltd. (South Korea)
- Crossbar Inc. (U.S.)
- Nantero Inc. (U.S.)
- Kilopass Technology Inc. (U.S.)
Highlights of The Emerging Non-Volatile Memory Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- 3D NAND
- Magnetoresistive Random Access Memory (MRAM)
- Spin-Transfer Torque Random Access Memory (STT-RAM)
- Ferroelectric RAM (FRAM)
- Resistive Random Access Memory (RERAM)
- 3D Xpoint
- Nano RAM
- Others
- By Application:
- Military & Aerospace
- Industrial
- Telecommunication
- Energy & Power
- Healthcare
- Agricultural
- Retail
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Emerging Non-Volatile Memory Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
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8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
Emerging non-volatile memory is a type of storage technology that uses flash memory, which can retain data even when the power is turned off. This makes it an ideal solution for devices such as smartphones and tablets, which need to be able to store large amounts of data without having to be constantly connected to a power source.
Some of the major companies in the emerging non-volatile memory market are Samsung Electronics Co., Ltd. (South Korea), Toshiba Corp. (Japan), Micron Technology, Inc. (U.S.), SK Hynix, Inc. (South Korea), Western Digital Corp. (U.S.), Adesto Technologies Corp. (U.S.), Intel Corporation. (U.S.), Microchip Technology, Inc. (U.S.), Fujitsu Ltd. (Japan), Everspin Technologies, Inc. (U.S.), Samsung Electronics Co., Ltd. (South Korea), Crossbar Inc. (U.S.), Nantero Inc. (U.S.), Kilopass Technology Inc. (U.S.).
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Emerging Non-Volatile Memory Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 Emerging Non-Volatile Memory Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 Emerging Non-Volatile Memory Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the Emerging Non-Volatile Memory Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global Emerging Non-Volatile Memory Market Size & Forecast, 2020-2028
4.5.1 Emerging Non-Volatile Memory Market Size and Y-o-Y Growth
4.5.2 Emerging Non-Volatile Memory Market Absolute $ Opportunity
Chapter 5 Global Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Market Size Forecast by Type
5.2.1 3D NAND
5.2.2 Magnetoresistive Random Access Memory (MRAM)
5.2.3 Spin-Transfer Torque Random Access Memory (STT-RAM)
5.2.4 Ferroelectric RAM (FRAM)
5.2.5 Resistive Random Access Memory (RERAM)
5.2.6 3D Xpoint
5.2.7 Nano RAM
5.2.8 Others
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Market Size Forecast by Applications
6.2.1 Military & Aerospace
6.2.2 Industrial
6.2.3 Telecommunication
6.2.4 Energy & Power
6.2.5 Healthcare
6.2.6 Agricultural
6.2.7 Retail
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Emerging Non-Volatile Memory Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Emerging Non-Volatile Memory Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Analysis and Forecast
9.1 Introduction
9.2 North America Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Market Size Forecast by Type
9.6.1 3D NAND
9.6.2 Magnetoresistive Random Access Memory (MRAM)
9.6.3 Spin-Transfer Torque Random Access Memory (STT-RAM)
9.6.4 Ferroelectric RAM (FRAM)
9.6.5 Resistive Random Access Memory (RERAM)
9.6.6 3D Xpoint
9.6.7 Nano RAM
9.6.8 Others
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Market Size Forecast by Applications
9.10.1 Military & Aerospace
9.10.2 Industrial
9.10.3 Telecommunication
9.10.4 Energy & Power
9.10.5 Healthcare
9.10.6 Agricultural
9.10.7 Retail
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Analysis and Forecast
10.1 Introduction
10.2 Europe Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Market Size Forecast by Type
10.6.1 3D NAND
10.6.2 Magnetoresistive Random Access Memory (MRAM)
10.6.3 Spin-Transfer Torque Random Access Memory (STT-RAM)
10.6.4 Ferroelectric RAM (FRAM)
10.6.5 Resistive Random Access Memory (RERAM)
10.6.6 3D Xpoint
10.6.7 Nano RAM
10.6.8 Others
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Market Size Forecast by Applications
10.10.1 Military & Aerospace
10.10.2 Industrial
10.10.3 Telecommunication
10.10.4 Energy & Power
10.10.5 Healthcare
10.10.6 Agricultural
10.10.7 Retail
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Market Size Forecast by Type
11.6.1 3D NAND
11.6.2 Magnetoresistive Random Access Memory (MRAM)
11.6.3 Spin-Transfer Torque Random Access Memory (STT-RAM)
11.6.4 Ferroelectric RAM (FRAM)
11.6.5 Resistive Random Access Memory (RERAM)
11.6.6 3D Xpoint
11.6.7 Nano RAM
11.6.8 Others
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Market Size Forecast by Applications
11.10.1 Military & Aerospace
11.10.2 Industrial
11.10.3 Telecommunication
11.10.4 Energy & Power
11.10.5 Healthcare
11.10.6 Agricultural
11.10.7 Retail
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Analysis and Forecast
12.1 Introduction
12.2 Latin America Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Market Size Forecast by Type
12.6.1 3D NAND
12.6.2 Magnetoresistive Random Access Memory (MRAM)
12.6.3 Spin-Transfer Torque Random Access Memory (STT-RAM)
12.6.4 Ferroelectric RAM (FRAM)
12.6.5 Resistive Random Access Memory (RERAM)
12.6.6 3D Xpoint
12.6.7 Nano RAM
12.6.8 Others
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Market Size Forecast by Applications
12.10.1 Military & Aerospace
12.10.2 Industrial
12.10.3 Telecommunication
12.10.4 Energy & Power
12.10.5 Healthcare
12.10.6 Agricultural
12.10.7 Retail
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Market Size Forecast by Type
13.6.1 3D NAND
13.6.2 Magnetoresistive Random Access Memory (MRAM)
13.6.3 Spin-Transfer Torque Random Access Memory (STT-RAM)
13.6.4 Ferroelectric RAM (FRAM)
13.6.5 Resistive Random Access Memory (RERAM)
13.6.6 3D Xpoint
13.6.7 Nano RAM
13.6.8 Others
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Market Size Forecast by Applications
13.10.1 Military & Aerospace
13.10.2 Industrial
13.10.3 Telecommunication
13.10.4 Energy & Power
13.10.5 Healthcare
13.10.6 Agricultural
13.10.7 Retail
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Emerging Non-Volatile Memory Market: Competitive Dashboard
14.2 Global Emerging Non-Volatile Memory Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Samsung Electronics Co., Ltd. (South Korea)
14.3.2 Toshiba Corp. (Japan)
14.3.3 Micron Technology, Inc. (U.S.)
14.3.4 SK Hynix, Inc. (South Korea)
14.3.5 Western Digital Corp. (U.S.)
14.3.6 Adesto Technologies Corp. (U.S.)
14.3.7 Intel Corporation. (U.S.)
14.3.8 Microchip Technology, Inc. (U.S.)
14.3.9 Fujitsu Ltd. (Japan)
14.3.10 Everspin Technologies, Inc. (U.S.)
14.3.11 Samsung Electronics Co., Ltd. (South Korea)
14.3.12 Crossbar Inc. (U.S.)
14.3.13 Nantero Inc. (U.S.)
14.3.14 Kilopass Technology Inc. (U.S.)
