Market Overview:
The global epitaxial growth equipment for SiC and GaN market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The market growth can be attributed to the increasing demand for semiconductor devices, especially in the automotive and electronics industries. Additionally, the growing demand for energy-efficient and high-performance electronic devices is also propelling the growth of this market. The global epitaxial growth equipment for SiC and GaN market can be segmented on the basis of type, application, and region. On the basis of type, this market can be divided into CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), and others. The MOCVD segment is expected to grow at a higher rate during the forecast period as it offers better performance than other types of epitaxial growth equipment. On the basis of application, this market can be classified into SiC epitaxy and GaN epitaxy segments. The SiC epityay segment is projected to grow at a higher rate duringthe forecast period owingto its growing demand in various end-use applications such as power electronics, LED lighting,, RF components,, etc.
Product Definition:
Epitaxial growth equipment is used to grow thin films of silicon carbide (SiC) and gallium nitride (GaN) on a substrate. The equipment is important because it allows for the controlled growth of these materials, which are used in a variety of applications including semiconductors and LED lighting.
CVD:
The global Coronavirus Disease (CVD) is an infectious disease of the nervous system, caused by a virus. The coronavirus was first identified in Saudi Arabia in 2012 and since then it has been detected in many countries globally including the U.S., China, Italy, Germany France among others.
MOCVD:
MOCVD is Metalorganic Chemical Vapor Deposition. It is a chemical vapor deposition process used to grow epitaxial layers on any solid material. SiC and GaN are the most commonly grown materials by MOCVD method due to their high growth rate, low cost, and ease of use in the process.
Application Insights:
In terms of revenue, the SiC equipment dominated the global market with a share of over 40.0% in 2017. The growth can be attributed to extensive use in semiconductor and energy applications including but not limited to power devices, high-frequency devices, super capacitors and solar cells. In addition, excellent properties such as low thermal expansion coefficient along with good mechanical strength are expected to drive product demand further during the forecast period.
The GaN equipment is anticipated to witness significant growth over the projected period owing to its growing use in various application segments including optoelectronics and photovoltaic (PV) modules among others.
Regional Analysis:
North America dominated the global market in 2017 owing to the presence of a large number of semiconductor companies, which has led to an increase in demand for advanced technologies. The region is expected to witness significant growth over the forecast period due to increasing investments by industry players for R&D activities related to epitaxial growth.
The Asia Pacific region is projected to grow at a lucrative rate over the forecast period owing its developing economy and rising adoption of modern technology. The growing electronics industry coupled with rapid urbanization and industrialization has resulted in high demand from customers, thereby driving market growth across this region.
Growth Factors:
- Increasing demand for high-efficiency and high-power devices across various industries
- Rising demand for semiconductors in automotive applications
- Proliferation of SiC and GaN-based power electronics in data centers
- Growing popularity of renewable energy sources such as solar and wind power
- Technological advancements that are driving down the cost of SiC and GaN substrates
Scope Of The Report
Report Attributes
Report Details
Report Title
Epitaxial Growth Equipment for SiC and GaN Market Research Report
By Type
CVD, MOCVD, Others
By Application
SiC Epitaxy, GaN Epitaxy
By Companies
NuFlare, Epiluvac, Tokyo Electron Limited, Samco, NAURA, VEECO, LPE, Aixtron, ShengZhen Naso Tech Co.,Ltd
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
210
Number of Tables & Figures
147
Customization Available
Yes, the report can be customized as per your need.
Global Epitaxial Growth Equipment for SiC and GaN Market Report Segments:
The global Epitaxial Growth Equipment for SiC and GaN market is segmented on the basis of:
Types
CVD, MOCVD, Others
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
SiC Epitaxy, GaN Epitaxy
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- NuFlare
- Epiluvac
- Tokyo Electron Limited
- Samco
- NAURA
- VEECO
- LPE
- Aixtron
- ShengZhen Naso Tech Co.,Ltd
Highlights of The Epitaxial Growth Equipment for SiC and GaN Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- CVD
- MOCVD
- Others
- By Application:
- SiC Epitaxy
- GaN Epitaxy
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Epitaxial Growth Equipment for SiC and GaN Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
Epitaxial growth equipment is used to grow epitaxial layers of SiC and GaN on a substrate.
Some of the major companies in the epitaxial growth equipment for sic and gan market are NuFlare, Epiluvac, Tokyo Electron Limited, Samco, NAURA, VEECO, LPE, Aixtron, ShengZhen Naso Tech Co.,Ltd.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Epitaxial Growth Equipment for SiC and GaN Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 Epitaxial Growth Equipment for SiC and GaN Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 Epitaxial Growth Equipment for SiC and GaN Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the Epitaxial Growth Equipment for SiC and GaN Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global Epitaxial Growth Equipment for SiC and GaN Market Size & Forecast, 2020-2028
4.5.1 Epitaxial Growth Equipment for SiC and GaN Market Size and Y-o-Y Growth
4.5.2 Epitaxial Growth Equipment for SiC and GaN Market Absolute $ Opportunity
Chapter 5 Global Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Market Size Forecast by Type
5.2.1 CVD
5.2.2 MOCVD
5.2.3 Others
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Market Size Forecast by Applications
6.2.1 SiC Epitaxy
6.2.2 GaN Epitaxy
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Epitaxial Growth Equipment for SiC and GaN Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Epitaxial Growth Equipment for SiC and GaN Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Analysis and Forecast
9.1 Introduction
9.2 North America Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Market Size Forecast by Type
9.6.1 CVD
9.6.2 MOCVD
9.6.3 Others
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Market Size Forecast by Applications
9.10.1 SiC Epitaxy
9.10.2 GaN Epitaxy
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Analysis and Forecast
10.1 Introduction
10.2 Europe Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Market Size Forecast by Type
10.6.1 CVD
10.6.2 MOCVD
10.6.3 Others
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Market Size Forecast by Applications
10.10.1 SiC Epitaxy
10.10.2 GaN Epitaxy
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Market Size Forecast by Type
11.6.1 CVD
11.6.2 MOCVD
11.6.3 Others
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Market Size Forecast by Applications
11.10.1 SiC Epitaxy
11.10.2 GaN Epitaxy
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Analysis and Forecast
12.1 Introduction
12.2 Latin America Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Market Size Forecast by Type
12.6.1 CVD
12.6.2 MOCVD
12.6.3 Others
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Market Size Forecast by Applications
12.10.1 SiC Epitaxy
12.10.2 GaN Epitaxy
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Market Size Forecast by Type
13.6.1 CVD
13.6.2 MOCVD
13.6.3 Others
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Market Size Forecast by Applications
13.10.1 SiC Epitaxy
13.10.2 GaN Epitaxy
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Epitaxial Growth Equipment for SiC and GaN Market: Competitive Dashboard
14.2 Global Epitaxial Growth Equipment for SiC and GaN Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 NuFlare
14.3.2 Epiluvac
14.3.3 Tokyo Electron Limited
14.3.4 Samco
14.3.5 NAURA
14.3.6 VEECO
14.3.7 LPE
14.3.8 Aixtron
14.3.9 ShengZhen Naso Tech Co.,Ltd
