Market Overview:
The global gallium nitride high-electron-mobility transistor market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The growth in this market can be attributed to the increasing demand for gallium nitride high-electron-mobility transistors in various applications, such as consumer electronics, automotive, medical industry and others. Additionally, the growing demand for energy efficient and high performance devices is also contributing to the growth of this market. Some of the major players operating in this market are Samsung Electronics Co., Ltd., Texas Instruments Incorporated, Renesas Electronics Corporation and Infineon Technologies AG.
Product Definition:
A gallium nitride high-electron-mobility transistor (GaN HEMT) is a type of transistor that uses gallium nitride as the semiconductor material. GaN HEMTs are important because they can operate at much higher frequencies than other types of transistors, making them useful for applications such as wireless communications and radar.
100V:
100V is the voltage of electric current which flows through a conductor when it is given a positive or negative charge by an external source. The higher the electron mobility, the smaller will be 100V be for a particular material. For example, silicon has low electron mobility and so does germanium but silica has high electron mobility and hence 100 volts can flow easily through silica whereas only 50-70 can flow easily through germanium.
400V:
400V is the highest voltage ever achieved in a transistor. It was first created by Bell Laboratories in their history of invention of the transistor, and it has been continually improved since then. 400V is more than twice as high as any other electronic device can offer; however, it can be easily handled by gallium nitride (GaN) technology.
Application Insights:
The consumer electronics segment accounted for the largest revenue share in 2017 and is anticipated to continue its dominance over the forecast period. Gallium nitride high-electron-mobility transistor finds application in various electronic products such as LED/LCD TVs, set-top boxes (STB), digital televisions, mobile phones, personal computers (PCs), and other related products. The rising demand for high technology devices coupled with flexible manufacturing is expected to drive growth over the coming years.
The automotive sector accounted for a significant market share in 2017 owing to increasing use of gallium nitride based power amplifiers that are used in hybrid vehicles and electric cars. Growing investments by governments across various regions towards promoting Electric Vehicles (EVs) production is further expected to propel industry growth over the coming years.
Regional Analysis:
North America accounted for the largest market share in 2017. The region is expected to continue its dominance over the forecast period owing to high demand from various application industries, such as consumer electronics, automotive and medical. Rising adoption of laptops and smartphones along with increasing demand for display devices in developed economies including U.S., Canada and Mexico are projected to drive industry growth over the next eight years.
Asia Pacific is estimated to be fastest-growing regional market from 2018 to 2030 due to rising disposable income coupled with growing industrialization in emerging countries such as China, India Japan South Korea among others will have a positive impact on global gallium nitride high-electron-mobility transistor (HEMT) industry growth over the coming years.
Growth Factors:
- Increasing demand for GaN-based power devices from the automotive and consumer electronics industries on account of their high efficiency and superior performance as compared to silicon-based counterparts.
- Proliferation of wireless communication technologies, such as 5G, is expected to fuel the growth of GaN HEMT market over the forecast period.
- Growing demand for energy-efficient LED lighting solutions is anticipated to boost the adoption of GaN HEMTs in this application segment over the next few years.
- Rising investments in R&D activities for developing new applications of GaN HEMTs are likely to provide a major impetus to market growth during the forecast period.
Scope Of The Report
Report Attributes
Report Details
Report Title
Gallium Nitride High-electron-mobility Transistor Market Research Report
By Type
100V, 400V, 600V, 650V
By Application
Consumer Electronics, Automotive, Medical Industry, Others
By Companies
Nexperia, GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas, ON Semiconductor, Fujitsu, Nexperia
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
159
Number of Tables & Figures
112
Customization Available
Yes, the report can be customized as per your need.
Global Gallium Nitride High-electron-mobility Transistor Market Report Segments:
The global Gallium Nitride High-electron-mobility Transistor market is segmented on the basis of:
Types
100V, 400V, 600V, 650V
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Consumer Electronics, Automotive, Medical Industry, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Nexperia
- GaN Systems
- Infineon Technologies
- STMicroelectronics
- TI
- Renesas
- ON Semiconductor
- Fujitsu
- Nexperia
Highlights of The Gallium Nitride High-electron-mobility Transistor Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- 100V
- 400V
- 600V
- 650V
- By Application:
- Consumer Electronics
- Automotive
- Medical Industry
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Gallium Nitride High-electron-mobility Transistor Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
A Gallium Nitride High-electron-mobility Transistor is a type of transistor that has a higher electron mobility than other types of transistors. This allows it to be more efficient in transferring electricity and data between the transistor's terminals.
Some of the major companies in the gallium nitride high-electron-mobility transistor market are Nexperia, GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas, ON Semiconductor, Fujitsu, Nexperia.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Gallium Nitride High-electron-mobility Transistor Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 Gallium Nitride High-electron-mobility Transistor Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 Gallium Nitride High-electron-mobility Transistor Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the Gallium Nitride High-electron-mobility Transistor Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global Gallium Nitride High-electron-mobility Transistor Market Size & Forecast, 2018-2028
4.5.1 Gallium Nitride High-electron-mobility Transistor Market Size and Y-o-Y Growth
4.5.2 Gallium Nitride High-electron-mobility Transistor Market Absolute $ Opportunity
Chapter 5 Global Gallium Nitride High-electron-mobility Transistor Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Type
5.2.1 100V
5.2.2 400V
5.2.3 600V
5.2.4 650V
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Gallium Nitride High-electron-mobility Transistor Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Applications
6.2.1 Consumer Electronics
6.2.2 Automotive
6.2.3 Medical Industry
6.2.4 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Gallium Nitride High-electron-mobility Transistor Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Gallium Nitride High-electron-mobility Transistor Analysis and Forecast
9.1 Introduction
9.2 North America Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Type
9.6.1 100V
9.6.2 400V
9.6.3 600V
9.6.4 650V
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Applications
9.10.1 Consumer Electronics
9.10.2 Automotive
9.10.3 Medical Industry
9.10.4 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Gallium Nitride High-electron-mobility Transistor Analysis and Forecast
10.1 Introduction
10.2 Europe Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Type
10.6.1 100V
10.6.2 400V
10.6.3 600V
10.6.4 650V
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Applications
10.10.1 Consumer Electronics
10.10.2 Automotive
10.10.3 Medical Industry
10.10.4 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Gallium Nitride High-electron-mobility Transistor Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Type
11.6.1 100V
11.6.2 400V
11.6.3 600V
11.6.4 650V
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Applications
11.10.1 Consumer Electronics
11.10.2 Automotive
11.10.3 Medical Industry
11.10.4 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Gallium Nitride High-electron-mobility Transistor Analysis and Forecast
12.1 Introduction
12.2 Latin America Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Type
12.6.1 100V
12.6.2 400V
12.6.3 600V
12.6.4 650V
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Applications
12.10.1 Consumer Electronics
12.10.2 Automotive
12.10.3 Medical Industry
12.10.4 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Gallium Nitride High-electron-mobility Transistor Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Type
13.6.1 100V
13.6.2 400V
13.6.3 600V
13.6.4 650V
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Gallium Nitride High-electron-mobility Transistor Market Size Forecast by Applications
13.10.1 Consumer Electronics
13.10.2 Automotive
13.10.3 Medical Industry
13.10.4 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Gallium Nitride High-electron-mobility Transistor Market: Competitive Dashboard
14.2 Global Gallium Nitride High-electron-mobility Transistor Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Nexperia
14.3.2 GaN Systems
14.3.3 Infineon Technologies
14.3.4 STMicroelectronics
14.3.5 TI
14.3.6 Renesas
14.3.7 ON Semiconductor
14.3.8 Fujitsu
14.3.9 Nexperia
