Market Overview:
The global gallium nitride (GaN) based devices market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The market growth can be attributed to the increasing demand for GaN-based power devices, electronic devices, photoelectric devices, and RF devices across different applications. In addition, the growing demand for GaN-based semiconductor products in the Asia Pacific region is also contributing to the growth of this market. Some of the major players operating in this market are Cree Inc., Texas Instruments Inc., Panasonic Corporation, Fujitsu Limited, and Infineon Technologies AG.
 Based Devices Industry Outlook.svg)
Product Definition:
Gallium nitride is a compound of gallium and nitrogen. It is used to make light-emitting diodes (LEDs) and lasers. Gallium nitride based devices are important because they can be used to make high-power, efficient, and durable electronic devices.
Power Devicea:
Power devices are used in GaN-based devices for various applications such as high voltage switches, power supplies, and driver circuits. The growth factor of the Power Devicea market is High Demand from end-use industries such as Automotive & Transportation and Information Technology (IT). Moreover, the market is expected to grow at a significant rate owing to its features like compact size & low cost which helps in saving space.
Electronic Devices:
GaN-based devices are high-power, radio frequency devices that are used in wireless communication and defense applications. GaN technology is expected to replace silicon semiconductors over the forecast period owing to several benefits such as low power consumption, higher efficiency, and ability to operate at high temperatures.
The global electronic device market size was valued at USD 575 billion in 2015 and is projected to grow significantly over the next seven years.
Application Insights:
The power device segment accounted for the largest revenue share in 2017 and is projected to continue its dominance over the forecast period. The growth can be attributed to increasing demand from various end-use industries including automotive, construction, aerospace and defense. Moreover, gallium nitride semiconductor has a high potential as an energy storage medium in renewable energy systems owing to its ability to operate at elevated temperatures. This factor is expected to drive industry growth over the coming years.
Regional Analysis:
North America dominated the global market in 2017. This can be attributed to early adoption of the product, high disposable income, and technological advancements. The U.S.-based companies are at the forefront in developing and commercializing products based on GaN technology worldwide. Furthermore, growing defense spending by various countries is also expected to propel demand for these devices over the forecast period.
Asia Pacific is anticipated to witness significant growth over the next eight years owing to increasing government investments in infrastructure development coupled with rising consumer electronics demand from China and India will drive industry expansion across this region as well as others such as Australia and Singapore that have a strong manufacturing base for electronic components or power devices based on GaN technology are expected to benefit significantly from it during this period due its favorable government policies towards research & development tax credit scheme which has attracted major players such as Samsung Electronics Co., Ltd., LG Chem Ltd., Sony Corporation; Toshiba Corporation; Fujitsu General Limited; Hitachi, Ltd.
Growth Factors:
- Increasing demand for GaN-based devices from the automotive sector on account of their high efficiency and low power consumption.
- Proliferation of LED lighting and rising demand for energy-efficient lighting solutions across the globe.
- Growing demand for GaN-based devices in consumer electronics applications such as smartphones, tablets, and laptops on account of their superior performance characteristics over silicon-based counterparts.
- Rising investments in R&D activities by leading players to develop next-generation GaN-based devices that can address specific application requirements more effectively.
Scope Of The Report
Report Attributes
Report Details
Report Title
Gallium Nitride(GaN) Based Devices Market Research Report
By Type
Power Devicea, Electronic Devices, Photoelectric Devices, RF Devices
By Application
Radar, Satellite, Base Station, Inverter, Power Switch, Others
By Companies
Infineon, ON Semiconductor, Texas Instruments, Navitas, Power Integrations, GaN Systems, Fujitsu, Toshiba, NTT Advanced Technology, RF Micro Devices, Cree Incorporated, Aixtron, Dalian Xinguan Technology, CorEnergy Semi, Suzhou Gpower
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
171
Number of Tables & Figures
120
Customization Available
Yes, the report can be customized as per your need.
Global Gallium Nitride(GaN) Based Devices Market Report Segments:
The global Gallium Nitride(GaN) Based Devices market is segmented on the basis of:
Types
Power Devicea, Electronic Devices, Photoelectric Devices, RF Devices
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Radar, Satellite, Base Station, Inverter, Power Switch, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Infineon
- ON Semiconductor
- Texas Instruments
- Navitas
- Power Integrations
- GaN Systems
- Fujitsu
- Toshiba
- NTT Advanced Technology
- RF Micro Devices
- Cree Incorporated
- Aixtron
- Dalian Xinguan Technology
- CorEnergy Semi
- Suzhou Gpower
 Based Devices Market Overview.svg)
Highlights of The Gallium Nitride(GaN) Based Devices Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- Power Devicea
- Electronic Devices
- Photoelectric Devices
- RF Devices
- By Application:
- Radar
- Satellite
- Base Station
- Inverter
- Power Switch
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Gallium Nitride(GaN) Based Devices Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
 Based Devices Market Statistics.svg)
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
Gallium Nitride(GaN) based devices are semiconductor devices that use gallium nitride as the active layer material. GaN based devices have several advantages over other semiconductor materials, including high electron mobility and low operating temperatures.
Some of the major companies in the gallium nitride(gan) based devices market are Infineon, ON Semiconductor, Texas Instruments, Navitas, Power Integrations, GaN Systems, Fujitsu, Toshiba, NTT Advanced Technology, RF Micro Devices, Cree Incorporated, Aixtron, Dalian Xinguan Technology, CorEnergy Semi, Suzhou Gpower.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Gallium Nitride(GaN) Based Devices Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 Gallium Nitride(GaN) Based Devices Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 Gallium Nitride(GaN) Based Devices Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the Gallium Nitride(GaN) Based Devices Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global Gallium Nitride(GaN) Based Devices Market Size & Forecast, 2018-2028
4.5.1 Gallium Nitride(GaN) Based Devices Market Size and Y-o-Y Growth
4.5.2 Gallium Nitride(GaN) Based Devices Market Absolute $ Opportunity
Chapter 5 Global Gallium Nitride(GaN) Based Devices Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Gallium Nitride(GaN) Based Devices Market Size Forecast by Type
5.2.1 Power Devicea
5.2.2 Electronic Devices
5.2.3 Photoelectric Devices
5.2.4 RF Devices
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Gallium Nitride(GaN) Based Devices Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Gallium Nitride(GaN) Based Devices Market Size Forecast by Applications
6.2.1 Radar
6.2.2 Satellite
6.2.3 Base Station
6.2.4 Inverter
6.2.5 Power Switch
6.2.6 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Gallium Nitride(GaN) Based Devices Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Gallium Nitride(GaN) Based Devices Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Gallium Nitride(GaN) Based Devices Analysis and Forecast
9.1 Introduction
9.2 North America Gallium Nitride(GaN) Based Devices Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Gallium Nitride(GaN) Based Devices Market Size Forecast by Type
9.6.1 Power Devicea
9.6.2 Electronic Devices
9.6.3 Photoelectric Devices
9.6.4 RF Devices
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Gallium Nitride(GaN) Based Devices Market Size Forecast by Applications
9.10.1 Radar
9.10.2 Satellite
9.10.3 Base Station
9.10.4 Inverter
9.10.5 Power Switch
9.10.6 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Gallium Nitride(GaN) Based Devices Analysis and Forecast
10.1 Introduction
10.2 Europe Gallium Nitride(GaN) Based Devices Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Gallium Nitride(GaN) Based Devices Market Size Forecast by Type
10.6.1 Power Devicea
10.6.2 Electronic Devices
10.6.3 Photoelectric Devices
10.6.4 RF Devices
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Gallium Nitride(GaN) Based Devices Market Size Forecast by Applications
10.10.1 Radar
10.10.2 Satellite
10.10.3 Base Station
10.10.4 Inverter
10.10.5 Power Switch
10.10.6 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Gallium Nitride(GaN) Based Devices Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Gallium Nitride(GaN) Based Devices Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Gallium Nitride(GaN) Based Devices Market Size Forecast by Type
11.6.1 Power Devicea
11.6.2 Electronic Devices
11.6.3 Photoelectric Devices
11.6.4 RF Devices
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Gallium Nitride(GaN) Based Devices Market Size Forecast by Applications
11.10.1 Radar
11.10.2 Satellite
11.10.3 Base Station
11.10.4 Inverter
11.10.5 Power Switch
11.10.6 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Gallium Nitride(GaN) Based Devices Analysis and Forecast
12.1 Introduction
12.2 Latin America Gallium Nitride(GaN) Based Devices Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Gallium Nitride(GaN) Based Devices Market Size Forecast by Type
12.6.1 Power Devicea
12.6.2 Electronic Devices
12.6.3 Photoelectric Devices
12.6.4 RF Devices
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Gallium Nitride(GaN) Based Devices Market Size Forecast by Applications
12.10.1 Radar
12.10.2 Satellite
12.10.3 Base Station
12.10.4 Inverter
12.10.5 Power Switch
12.10.6 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Gallium Nitride(GaN) Based Devices Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Gallium Nitride(GaN) Based Devices Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Gallium Nitride(GaN) Based Devices Market Size Forecast by Type
13.6.1 Power Devicea
13.6.2 Electronic Devices
13.6.3 Photoelectric Devices
13.6.4 RF Devices
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Gallium Nitride(GaN) Based Devices Market Size Forecast by Applications
13.10.1 Radar
13.10.2 Satellite
13.10.3 Base Station
13.10.4 Inverter
13.10.5 Power Switch
13.10.6 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Gallium Nitride(GaN) Based Devices Market: Competitive Dashboard
14.2 Global Gallium Nitride(GaN) Based Devices Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Infineon
14.3.2 ON Semiconductor
14.3.3 Texas Instruments
14.3.4 Navitas
14.3.5 Power Integrations
14.3.6 GaN Systems
14.3.7 Fujitsu
14.3.8 Toshiba
14.3.9 NTT Advanced Technology
14.3.10 RF Micro Devices
14.3.11 Cree Incorporated
14.3.12 Aixtron
14.3.13 Dalian Xinguan Technology
14.3.14 CorEnergy Semi
14.3.15 Suzhou Gpower
