Market Overview:
The global GaN and SiC power device market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The growth in this market can be attributed to the increasing demand for energy-efficient devices across different applications, rising demand for electric vehicles, and growing investments in new energy projects. Based on type, the GaN power semiconductors segment is expected to account for the majority share of the global GaN and SiC power device market during the forecast period. This can be attributed to their high efficiency as compared to silicon-based devices and their ability to handle high voltages without degradation. Based on application, consumer electronics is expected to be one of the fastest-growing segments during the forecast period. This can be attributedtothe increasing adoption of LED TVs and other energy-efficient appliances across different regions.
Product Definition:
Gallium nitride (GaN) and silicon carbide (SiC) power devices are high-power, high-efficiency semiconductor switches used in a variety of applications, including electric vehicles, solar energy systems, and industrial motors. They are important because they can handle more power than traditional semiconductor materials like silicon, making them more efficient and allowing for smaller or lighter electronic devices.
GaN Power Semiconductors:
GaN Power Semiconductors are high-performance, epitaxial layer superconductor thin films that exhibit a continuous rise in temperature with an increase in current. GaN Power Semiconductors have applications across several sectors including power devices, optoelectronics & photonics, and spintronics.
SiC Power Semiconductors:
The global SiC power semiconductors and it's usage in GaN and SiC Power Device market size was valued at USD 2.5 billion in 2016. The increasing demand for high-power devices such as RF modules, solar cells, etc., is expected to drive the industry growth over the forecast period.
Application Insights:
The consumer electronics segment accounted for a revenue share of over 30% in 2017. The product is widely used in the manufacture of flat panel TVs, LED/LCD monitors, projectors, and other displays. Increasing demand for smart devices across the globe has resulted in an increased number of product installations. This factor is anticipated to fuel market growth during the forecast period.
The new energy & photovoltaic application segment was valued over USD 1 billion in 2017 and is expected to witness significant growth during the forecast period owing to rising demand from various end-use industries such as solar power generation, wind turbines etcetera. The industry witnessed tremendous growth due to supportive government initiatives coupled with technological advancements that enhanced efficiency and production capacities resulting into higher output voltages and currents which further stimulate market expansion over next eight years or so (estimated).
Regional Analysis:
The North American regional market accounted for the largest revenue share in 2017. The growth of this region is attributed to the presence of major companies such as Amprius, Inc.; Broadcom Inc.; and Intel Corporation. These companies are actively involved in research & development activities to develop advanced power devices based on silicium carbide technology. Moreover, these players are also focusing on manufacturing high-efficient power devices with low emission and high durability over a period of time.
The Asia Pacific regional market is anticipated to witness significant growth during the forecast years owing to increasing government funding for new energy vehicles (NEVs) projects along with rising awareness regarding environment protection.
Moreover; growing demand for consumer electronics products due tp increasing disposable income especially in developing economies including China.
Growth Factors:
- Increasing demand for high-efficiency and low-cost power devices from the automotive, industrial, and consumer electronics sectors.
- Growing popularity of electric vehicles and renewable energy sources such as solar and wind power.
- Proliferation of Internet of Things (IoT) devices and the need for more efficient data centers.
- Development of new applications for GaN and SiC power devices in areas such as telecommunications, aerospace, defense, and medical technology.
- Advances in materials science that continue to improve the performance characteristics of GaN and SiC power devices
Scope Of The Report
Report Attributes
Report Details
Report Title
GaN and SiC Power Device Market Research Report
By Type
GaN Power Semiconductors, SiC Power Semiconductors
By Application
Consumer Electronics, New Energy and Photovoltaic, Rail and Transportation, Industrial Motors, UPS Power Supply, New Energy Vehicles, Others
By Companies
Infineon, CREE (Wolfspeed), ROHM, ST, ON Semiconductor, Mitsubishi Electric, Fuji Electric, Littelfuse, Global Power Technology, BASiC Semiconductor
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
230
Number of Tables & Figures
161
Customization Available
Yes, the report can be customized as per your need.
Global GaN and SiC Power Device Market Report Segments:
The global GaN and SiC Power Device market is segmented on the basis of:
Types
GaN Power Semiconductors, SiC Power Semiconductors
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Consumer Electronics, New Energy and Photovoltaic, Rail and Transportation, Industrial Motors, UPS Power Supply, New Energy Vehicles, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Infineon
- CREE (Wolfspeed)
- ROHM
- ST
- ON Semiconductor
- Mitsubishi Electric
- Fuji Electric
- Littelfuse
- Global Power Technology
- BASiC Semiconductor
Highlights of The GaN and SiC Power Device Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- GaN Power Semiconductors
- SiC Power Semiconductors
- By Application:
- Consumer Electronics
- New Energy and Photovoltaic
- Rail and Transportation
- Industrial Motors
- UPS Power Supply
- New Energy Vehicles
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the GaN and SiC Power Device Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
GaN and SiC power devices are semiconductor-based energy storage devices that can be used to store energy from renewable sources such as solar or wind power. They can also be used to generate electricity when the stored energy is needed, such as during an outage.
Some of the major players in the gan and sic power device market are Infineon, CREE (Wolfspeed), ROHM, ST, ON Semiconductor, Mitsubishi Electric, Fuji Electric, Littelfuse, Global Power Technology, BASiC Semiconductor.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 GaN and SiC Power Device Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 GaN and SiC Power Device Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 GaN and SiC Power Device Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the GaN and SiC Power Device Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global GaN and SiC Power Device Market Size & Forecast, 2018-2028
4.5.1 GaN and SiC Power Device Market Size and Y-o-Y Growth
4.5.2 GaN and SiC Power Device Market Absolute $ Opportunity
Chapter 5 Global GaN and SiC Power Device Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 GaN and SiC Power Device Market Size Forecast by Type
5.2.1 GaN Power Semiconductors
5.2.2 SiC Power Semiconductors
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global GaN and SiC Power Device Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 GaN and SiC Power Device Market Size Forecast by Applications
6.2.1 Consumer Electronics
6.2.2 New Energy and Photovoltaic
6.2.3 Rail and Transportation
6.2.4 Industrial Motors
6.2.5 UPS Power Supply
6.2.6 New Energy Vehicles
6.2.7 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global GaN and SiC Power Device Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 GaN and SiC Power Device Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America GaN and SiC Power Device Analysis and Forecast
9.1 Introduction
9.2 North America GaN and SiC Power Device Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America GaN and SiC Power Device Market Size Forecast by Type
9.6.1 GaN Power Semiconductors
9.6.2 SiC Power Semiconductors
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America GaN and SiC Power Device Market Size Forecast by Applications
9.10.1 Consumer Electronics
9.10.2 New Energy and Photovoltaic
9.10.3 Rail and Transportation
9.10.4 Industrial Motors
9.10.5 UPS Power Supply
9.10.6 New Energy Vehicles
9.10.7 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe GaN and SiC Power Device Analysis and Forecast
10.1 Introduction
10.2 Europe GaN and SiC Power Device Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe GaN and SiC Power Device Market Size Forecast by Type
10.6.1 GaN Power Semiconductors
10.6.2 SiC Power Semiconductors
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe GaN and SiC Power Device Market Size Forecast by Applications
10.10.1 Consumer Electronics
10.10.2 New Energy and Photovoltaic
10.10.3 Rail and Transportation
10.10.4 Industrial Motors
10.10.5 UPS Power Supply
10.10.6 New Energy Vehicles
10.10.7 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific GaN and SiC Power Device Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific GaN and SiC Power Device Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific GaN and SiC Power Device Market Size Forecast by Type
11.6.1 GaN Power Semiconductors
11.6.2 SiC Power Semiconductors
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific GaN and SiC Power Device Market Size Forecast by Applications
11.10.1 Consumer Electronics
11.10.2 New Energy and Photovoltaic
11.10.3 Rail and Transportation
11.10.4 Industrial Motors
11.10.5 UPS Power Supply
11.10.6 New Energy Vehicles
11.10.7 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America GaN and SiC Power Device Analysis and Forecast
12.1 Introduction
12.2 Latin America GaN and SiC Power Device Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America GaN and SiC Power Device Market Size Forecast by Type
12.6.1 GaN Power Semiconductors
12.6.2 SiC Power Semiconductors
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America GaN and SiC Power Device Market Size Forecast by Applications
12.10.1 Consumer Electronics
12.10.2 New Energy and Photovoltaic
12.10.3 Rail and Transportation
12.10.4 Industrial Motors
12.10.5 UPS Power Supply
12.10.6 New Energy Vehicles
12.10.7 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) GaN and SiC Power Device Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) GaN and SiC Power Device Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) GaN and SiC Power Device Market Size Forecast by Type
13.6.1 GaN Power Semiconductors
13.6.2 SiC Power Semiconductors
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) GaN and SiC Power Device Market Size Forecast by Applications
13.10.1 Consumer Electronics
13.10.2 New Energy and Photovoltaic
13.10.3 Rail and Transportation
13.10.4 Industrial Motors
13.10.5 UPS Power Supply
13.10.6 New Energy Vehicles
13.10.7 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 GaN and SiC Power Device Market: Competitive Dashboard
14.2 Global GaN and SiC Power Device Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Infineon
14.3.2 CREE (Wolfspeed)
14.3.3 ROHM
14.3.4 ST
14.3.5 ON Semiconductor
14.3.6 Mitsubishi Electric
14.3.7 Fuji Electric
14.3.8 Littelfuse
14.3.9 Global Power Technology
14.3.10 BASiC Semiconductor
