Market Overview:
The global GaN high-electron-mobility transistor (HEMT) market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The growth in the market can be attributed to the increasing demand for GaN HEMTs in various applications such as consumer electronics, automotive, medical industry, and others. In terms of type, the 100V segment is expected to hold a major share of the global GaN HEMT market during the forecast period. However, with respect to CAGR, the 650V segment is projected to grow at a higher rate than other segments during 2018-2030. Geographically speaking, North America accounted for majority share of revenue generated by global GaN HEMT market in 2017 and this trend is anticipated continue throughout forecast period.
Product Definition:
A GaN high-electron-mobility transistor (HEMT) is a type of transistor that uses gallium nitride on a silicon substrate. GaN HEMTs have higher electron mobility than other types of transistors, making them suitable for use in high-frequency applications.
100V:
The global 100V it's usage and growth factor in GaN High-electron-mobility Transistor market size was valued at USD 2.5 billion in 2016 and is expected to grow at a CAGR of XX% over the forecast period.
400V:
400V is the highest voltage that can be achieved with a GaN High-electron-mobility Transistor (HEMTT) and it’s used in power supply applications. 400V is also known as “high voltage” or “HV” which means it has higher electron mobility than regular electric circuits at normal temperature and pressure. HEMTT are special semiconductor devices that are used for high power applications like electric vehicles, etc.
Application Insights:
The market is segmented by application into consumer electronics, automotive, medical industry and other applications. The consumer electronics segment accounted for the largest revenue share in 2016 owing to increasing demand for high-performance products with low power consumption. Growing usage of GaN HEMTs in smartphones, tablets and laptops coupled with rising disposable income is expected to drive the product demand over the forecast period.
The automotive sector is anticipated to witness significant growth over the coming years due to increasing adoption of electric vehicles (EVs). Increasing research & development activities related to EVs are expected to result in higher product penetration across various automotive applications such as headlamps, taillamps and brake lights among others during the forecast period.
Growing awareness regarding energy conservation has resulted in a rise in investments for research & development activities related on renewable energy sources including solar and wind power across various countries including China U.
Regional Analysis:
North America dominated the global market in 2017. The region is expected to witness a CAGR of XX% during the forecast period. This growth can be attributed to increasing adoption of high-performance, low-cost electronics across various applications including consumer electronics, automotive and medical devices. Moreover, presence of key players such as Intel Corporation; Qualcomm Inc.; Texas Instruments Inc.; and Avago Technologies Limited in this region has led to increased availability of advanced products at competitive prices.
Asia Pacific is projected to emerge as the fastest growing regional market from 2018 to 2030 owing its rapid development in economies like China and India along with other Southeast Asian countries that have been witnessing strong economic growth for past few years on account of rising disposable income coupled with improving standard of living & social acceptance among people which are driving demand for consumer electronics products such as smartphones.
Growth Factors:
- Increasing demand for high-efficiency and high-power electronics in consumer and industrial applications
- Rising demand for GaN HEMTs from the telecommunications sector as operators move to 5G networks
- Proliferation of wireless charging technologies, which are expected to drive up demand for GaN power transistors
- Growing popularity of electric vehicles, which will require more powerful semiconductors to manage the increased power demands
- Advances in Gallium Nitride technology that make it easier and cheaper to manufacture GaN HEMTs
Scope Of The Report
Report Attributes
Report Details
Report Title
GaN High-electron-mobility Transistor Market Research Report
By Type
100V, 400V, 600V, 650V
By Application
Consumer Electronics, Automotive, Medical Industry, Others
By Companies
Nexperia, GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas, ON Semiconductor, Fujitsu, Nexperia
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
136
Number of Tables & Figures
96
Customization Available
Yes, the report can be customized as per your need.
Global GaN High-electron-mobility Transistor Market Report Segments:
The global GaN High-electron-mobility Transistor market is segmented on the basis of:
Types
100V, 400V, 600V, 650V
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Consumer Electronics, Automotive, Medical Industry, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Nexperia
- GaN Systems
- Infineon Technologies
- STMicroelectronics
- TI
- Renesas
- ON Semiconductor
- Fujitsu
- Nexperia
Highlights of The GaN High-electron-mobility Transistor Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- 100V
- 400V
- 600V
- 650V
- By Application:
- Consumer Electronics
- Automotive
- Medical Industry
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the GaN High-electron-mobility Transistor Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
A GaN high-electron-mobility transistor is a type of transistor that uses gallium nitride (GaN) as the semiconductor material. This type of transistor has very high electron mobility, which makes it capable of switching rapidly between different states. This makes it useful for applications such as digital logic and communication devices.
Some of the key players operating in the gan high-electron-mobility transistor market are Nexperia, GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas, ON Semiconductor, Fujitsu, Nexperia.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 GaN High-electron-mobility Transistor Market Overview 4.1 Introduction 4.1.1 Market Taxonomy 4.1.2 Market Definition 4.1.3 Macro-Economic Factors Impacting the Market Growth 4.2 GaN High-electron-mobility Transistor Market Dynamics 4.2.1 Market Drivers 4.2.2 Market Restraints 4.2.3 Market Opportunity 4.3 GaN High-electron-mobility Transistor Market - Supply Chain Analysis 4.3.1 List of Key Suppliers 4.3.2 List of Key Distributors 4.3.3 List of Key Consumers 4.4 Key Forces Shaping the GaN High-electron-mobility Transistor Market 4.4.1 Bargaining Power of Suppliers 4.4.2 Bargaining Power of Buyers 4.4.3 Threat of Substitution 4.4.4 Threat of New Entrants 4.4.5 Competitive Rivalry 4.5 Global GaN High-electron-mobility Transistor Market Size & Forecast, 2018-2028 4.5.1 GaN High-electron-mobility Transistor Market Size and Y-o-Y Growth 4.5.2 GaN High-electron-mobility Transistor Market Absolute $ Opportunity
Chapter 5 Global GaN High-electron-mobility Transistor Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 GaN High-electron-mobility Transistor Market Size Forecast by Type
5.2.1 100V
5.2.2 400V
5.2.3 600V
5.2.4 650V
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global GaN High-electron-mobility Transistor Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 GaN High-electron-mobility Transistor Market Size Forecast by Applications
6.2.1 Consumer Electronics
6.2.2 Automotive
6.2.3 Medical Industry
6.2.4 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global GaN High-electron-mobility Transistor Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 GaN High-electron-mobility Transistor Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America GaN High-electron-mobility Transistor Analysis and Forecast
9.1 Introduction
9.2 North America GaN High-electron-mobility Transistor Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America GaN High-electron-mobility Transistor Market Size Forecast by Type
9.6.1 100V
9.6.2 400V
9.6.3 600V
9.6.4 650V
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America GaN High-electron-mobility Transistor Market Size Forecast by Applications
9.10.1 Consumer Electronics
9.10.2 Automotive
9.10.3 Medical Industry
9.10.4 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe GaN High-electron-mobility Transistor Analysis and Forecast
10.1 Introduction
10.2 Europe GaN High-electron-mobility Transistor Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe GaN High-electron-mobility Transistor Market Size Forecast by Type
10.6.1 100V
10.6.2 400V
10.6.3 600V
10.6.4 650V
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe GaN High-electron-mobility Transistor Market Size Forecast by Applications
10.10.1 Consumer Electronics
10.10.2 Automotive
10.10.3 Medical Industry
10.10.4 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific GaN High-electron-mobility Transistor Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific GaN High-electron-mobility Transistor Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific GaN High-electron-mobility Transistor Market Size Forecast by Type
11.6.1 100V
11.6.2 400V
11.6.3 600V
11.6.4 650V
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific GaN High-electron-mobility Transistor Market Size Forecast by Applications
11.10.1 Consumer Electronics
11.10.2 Automotive
11.10.3 Medical Industry
11.10.4 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America GaN High-electron-mobility Transistor Analysis and Forecast
12.1 Introduction
12.2 Latin America GaN High-electron-mobility Transistor Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America GaN High-electron-mobility Transistor Market Size Forecast by Type
12.6.1 100V
12.6.2 400V
12.6.3 600V
12.6.4 650V
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America GaN High-electron-mobility Transistor Market Size Forecast by Applications
12.10.1 Consumer Electronics
12.10.2 Automotive
12.10.3 Medical Industry
12.10.4 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) GaN High-electron-mobility Transistor Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) GaN High-electron-mobility Transistor Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) GaN High-electron-mobility Transistor Market Size Forecast by Type
13.6.1 100V
13.6.2 400V
13.6.3 600V
13.6.4 650V
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) GaN High-electron-mobility Transistor Market Size Forecast by Applications
13.10.1 Consumer Electronics
13.10.2 Automotive
13.10.3 Medical Industry
13.10.4 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 GaN High-electron-mobility Transistor Market: Competitive Dashboard
14.2 Global GaN High-electron-mobility Transistor Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Nexperia
14.3.2 GaN Systems
14.3.3 Infineon Technologies
14.3.4 STMicroelectronics
14.3.5 TI
14.3.6 Renesas
14.3.7 ON Semiconductor
14.3.8 Fujitsu
14.3.9 Nexperia