Latest Update: Impact of current COVID-19 situation has been considered in this report while making the analysis.
Global GaN High-electron-mobility Transistor Market by Type (100V, 400V, 600V, 650V), By Application (Consumer Electronics, Automotive, Medical Industry, Others) and Region (North America, Latin America, Europe, Asia Pacific and Middle East & Africa), Forecast From 2022 To 2030-report

Global GaN High-electron-mobility Transistor Market by Type (100V, 400V, 600V, 650V), By Application (Consumer Electronics, Automotive, Medical Industry, Others) and Region (North America, Latin America, Europe, Asia Pacific and Middle East & Africa), Forecast From 2022 To 2030

Report ID: 245095 4200 Electronics & Semiconductor 377 136 Pages 4.8 (48)
                                          

Market Overview:


The global GaN high-electron-mobility transistor (HEMT) market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The growth in the market can be attributed to the increasing demand for GaN HEMTs in various applications such as consumer electronics, automotive, medical industry, and others. In terms of type, the 100V segment is expected to hold a major share of the global GaN HEMT market during the forecast period. However, with respect to CAGR, the 650V segment is projected to grow at a higher rate than other segments during 2018-2030. Geographically speaking, North America accounted for majority share of revenue generated by global GaN HEMT market in 2017 and this trend is anticipated continue throughout forecast period.


Global GaN High-electron-mobility Transistor Industry Outlook


Product Definition:


A GaN high-electron-mobility transistor (HEMT) is a type of transistor that uses gallium nitride on a silicon substrate. GaN HEMTs have higher electron mobility than other types of transistors, making them suitable for use in high-frequency applications.


100V:


The global 100V it's usage and growth factor in GaN High-electron-mobility Transistor market size was valued at USD 2.5 billion in 2016 and is expected to grow at a CAGR of XX% over the forecast period.


400V:


400V is the highest voltage that can be achieved with a GaN High-electron-mobility Transistor (HEMTT) and it’s used in power supply applications. 400V is also known as “high voltage” or “HV” which means it has higher electron mobility than regular electric circuits at normal temperature and pressure. HEMTT are special semiconductor devices that are used for high power applications like electric vehicles, etc.


Application Insights:


The market is segmented by application into consumer electronics, automotive, medical industry and other applications. The consumer electronics segment accounted for the largest revenue share in 2016 owing to increasing demand for high-performance products with low power consumption. Growing usage of GaN HEMTs in smartphones, tablets and laptops coupled with rising disposable income is expected to drive the product demand over the forecast period.


The automotive sector is anticipated to witness significant growth over the coming years due to increasing adoption of electric vehicles (EVs). Increasing research & development activities related to EVs are expected to result in higher product penetration across various automotive applications such as headlamps, taillamps and brake lights among others during the forecast period.


Growing awareness regarding energy conservation has resulted in a rise in investments for research & development activities related on renewable energy sources including solar and wind power across various countries including China U.


Regional Analysis:


North America dominated the global market in 2017. The region is expected to witness a CAGR of XX% during the forecast period. This growth can be attributed to increasing adoption of high-performance, low-cost electronics across various applications including consumer electronics, automotive and medical devices. Moreover, presence of key players such as Intel Corporation; Qualcomm Inc.; Texas Instruments Inc.; and Avago Technologies Limited in this region has led to increased availability of advanced products at competitive prices.


Asia Pacific is projected to emerge as the fastest growing regional market from 2018 to 2030 owing its rapid development in economies like China and India along with other Southeast Asian countries that have been witnessing strong economic growth for past few years on account of rising disposable income coupled with improving standard of living & social acceptance among people which are driving demand for consumer electronics products such as smartphones.


Growth Factors:


  • Increasing demand for high-efficiency and high-power electronics in consumer and industrial applications
  • Rising demand for GaN HEMTs from the telecommunications sector as operators move to 5G networks
  • Proliferation of wireless charging technologies, which are expected to drive up demand for GaN power transistors
  • Growing popularity of electric vehicles, which will require more powerful semiconductors to manage the increased power demands
  • Advances in Gallium Nitride technology that make it easier and cheaper to manufacture GaN HEMTs

Scope Of The Report

Report Attributes

Report Details

Report Title

GaN High-electron-mobility Transistor Market Research Report

By Type

100V, 400V, 600V, 650V

By Application

Consumer Electronics, Automotive, Medical Industry, Others

By Companies

Nexperia, GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas, ON Semiconductor, Fujitsu, Nexperia

Regions Covered

North America, Europe, APAC, Latin America, MEA

Base Year

2021

Historical Year

2019 to 2020 (Data from 2010 can be provided as per availability)

Forecast Year

2030

Number of Pages

136

Number of Tables & Figures

96

Customization Available

Yes, the report can be customized as per your need.


Global GaN High-electron-mobility Transistor Market Report Segments:

The global GaN High-electron-mobility Transistor market is segmented on the basis of:

Types

100V, 400V, 600V, 650V

The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.

Applications

Consumer Electronics, Automotive, Medical Industry, Others

The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.

Some of the companies that are profiled in this report are:

  1. Nexperia
  2. GaN Systems
  3. Infineon Technologies
  4. STMicroelectronics
  5. TI
  6. Renesas
  7. ON Semiconductor
  8. Fujitsu
  9. Nexperia

Global GaN High-electron-mobility Transistor Market Overview


Highlights of The GaN High-electron-mobility Transistor Market Report:

  1. The market structure and projections for the coming years.
  2. Drivers, restraints, opportunities, and current trends of market.
  3. Historical data and forecast.
  4. Estimations for the forecast period 2030.
  5. Developments and trends in the market.
  6. By Type:

    1. 100V
    2. 400V
    3. 600V
    4. 650V
  1. By Application:

    1. Consumer Electronics
    2. Automotive
    3. Medical Industry
    4. Others
  1. Market scenario by region, sub-region, and country.
  2. Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
  3. Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
  4. Government Policies, Macro & Micro economic factors are also included in the report.

We have studied the GaN High-electron-mobility Transistor Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.

Regional Analysis

  • North America
  • Europe
  • Asia Pacific
  • Middle East & Africa
  • Latin America

Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.

The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.

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Global GaN High-electron-mobility Transistor Market Statistics

8 Reasons to Buy This Report

  1. Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
  2. Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
  3. Implemented Robust Methodology to Prepare the Report
  4. Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
  5. Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
  6. Provides Information About the Top-winning Strategies Implemented by Industry Players.
  7. In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
  8. Customization of the Report Available

Frequently Asked Questions?


A GaN high-electron-mobility transistor is a type of transistor that uses gallium nitride (GaN) as the semiconductor material. This type of transistor has very high electron mobility, which makes it capable of switching rapidly between different states. This makes it useful for applications such as digital logic and communication devices.

Some of the key players operating in the gan high-electron-mobility transistor market are Nexperia, GaN Systems, Infineon Technologies, STMicroelectronics, TI, Renesas, ON Semiconductor, Fujitsu, Nexperia.

                                            
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 GaN High-electron-mobility Transistor Market Overview    4.1 Introduction       4.1.1 Market Taxonomy       4.1.2 Market Definition       4.1.3 Macro-Economic Factors Impacting the Market Growth    4.2 GaN High-electron-mobility Transistor Market Dynamics       4.2.1 Market Drivers       4.2.2 Market Restraints       4.2.3 Market Opportunity    4.3 GaN High-electron-mobility Transistor Market - Supply Chain Analysis       4.3.1 List of Key Suppliers       4.3.2 List of Key Distributors       4.3.3 List of Key Consumers    4.4 Key Forces Shaping the GaN High-electron-mobility Transistor Market       4.4.1 Bargaining Power of Suppliers       4.4.2 Bargaining Power of Buyers       4.4.3 Threat of Substitution       4.4.4 Threat of New Entrants       4.4.5 Competitive Rivalry    4.5 Global GaN High-electron-mobility Transistor Market Size & Forecast, 2018-2028       4.5.1 GaN High-electron-mobility Transistor Market Size and Y-o-Y Growth       4.5.2 GaN High-electron-mobility Transistor Market Absolute $ Opportunity

Chapter 5 Global GaN High-electron-mobility Transistor Market Analysis and Forecast by Type
   5.1 Introduction
      5.1.1 Key Market Trends & Growth Opportunities by Type
      5.1.2 Basis Point Share (BPS) Analysis by Type
      5.1.3 Absolute $ Opportunity Assessment by Type
   5.2 GaN High-electron-mobility Transistor Market Size Forecast by Type
      5.2.1 100V
      5.2.2 400V
      5.2.3 600V
      5.2.4 650V
   5.3 Market Attractiveness Analysis by Type

Chapter 6 Global GaN High-electron-mobility Transistor Market Analysis and Forecast by Applications
   6.1 Introduction
      6.1.1 Key Market Trends & Growth Opportunities by Applications
      6.1.2 Basis Point Share (BPS) Analysis by Applications
      6.1.3 Absolute $ Opportunity Assessment by Applications
   6.2 GaN High-electron-mobility Transistor Market Size Forecast by Applications
      6.2.1 Consumer Electronics
      6.2.2 Automotive
      6.2.3 Medical Industry
      6.2.4 Others
   6.3 Market Attractiveness Analysis by Applications

Chapter 7 Global GaN High-electron-mobility Transistor Market Analysis and Forecast by Region
   7.1 Introduction
      7.1.1 Key Market Trends & Growth Opportunities by Region
      7.1.2 Basis Point Share (BPS) Analysis by Region
      7.1.3 Absolute $ Opportunity Assessment by Region
   7.2 GaN High-electron-mobility Transistor Market Size Forecast by Region
      7.2.1 North America
      7.2.2 Europe
      7.2.3 Asia Pacific
      7.2.4 Latin America
      7.2.5 Middle East & Africa (MEA)
   7.3 Market Attractiveness Analysis by Region

Chapter 8 Coronavirus Disease (COVID-19) Impact 
   8.1 Introduction 
   8.2 Current & Future Impact Analysis 
   8.3 Economic Impact Analysis 
   8.4 Government Policies 
   8.5 Investment Scenario

Chapter 9 North America GaN High-electron-mobility Transistor Analysis and Forecast
   9.1 Introduction
   9.2 North America GaN High-electron-mobility Transistor Market Size Forecast by Country
      9.2.1 U.S.
      9.2.2 Canada
   9.3 Basis Point Share (BPS) Analysis by Country
   9.4 Absolute $ Opportunity Assessment by Country
   9.5 Market Attractiveness Analysis by Country
   9.6 North America GaN High-electron-mobility Transistor Market Size Forecast by Type
      9.6.1 100V
      9.6.2 400V
      9.6.3 600V
      9.6.4 650V
   9.7 Basis Point Share (BPS) Analysis by Type 
   9.8 Absolute $ Opportunity Assessment by Type 
   9.9 Market Attractiveness Analysis by Type
   9.10 North America GaN High-electron-mobility Transistor Market Size Forecast by Applications
      9.10.1 Consumer Electronics
      9.10.2 Automotive
      9.10.3 Medical Industry
      9.10.4 Others
   9.11 Basis Point Share (BPS) Analysis by Applications 
   9.12 Absolute $ Opportunity Assessment by Applications 
   9.13 Market Attractiveness Analysis by Applications

Chapter 10 Europe GaN High-electron-mobility Transistor Analysis and Forecast
   10.1 Introduction
   10.2 Europe GaN High-electron-mobility Transistor Market Size Forecast by Country
      10.2.1 Germany
      10.2.2 France
      10.2.3 Italy
      10.2.4 U.K.
      10.2.5 Spain
      10.2.6 Russia
      10.2.7 Rest of Europe
   10.3 Basis Point Share (BPS) Analysis by Country
   10.4 Absolute $ Opportunity Assessment by Country
   10.5 Market Attractiveness Analysis by Country
   10.6 Europe GaN High-electron-mobility Transistor Market Size Forecast by Type
      10.6.1 100V
      10.6.2 400V
      10.6.3 600V
      10.6.4 650V
   10.7 Basis Point Share (BPS) Analysis by Type 
   10.8 Absolute $ Opportunity Assessment by Type 
   10.9 Market Attractiveness Analysis by Type
   10.10 Europe GaN High-electron-mobility Transistor Market Size Forecast by Applications
      10.10.1 Consumer Electronics
      10.10.2 Automotive
      10.10.3 Medical Industry
      10.10.4 Others
   10.11 Basis Point Share (BPS) Analysis by Applications 
   10.12 Absolute $ Opportunity Assessment by Applications 
   10.13 Market Attractiveness Analysis by Applications

Chapter 11 Asia Pacific GaN High-electron-mobility Transistor Analysis and Forecast
   11.1 Introduction
   11.2 Asia Pacific GaN High-electron-mobility Transistor Market Size Forecast by Country
      11.2.1 China
      11.2.2 Japan
      11.2.3 South Korea
      11.2.4 India
      11.2.5 Australia
      11.2.6 South East Asia (SEA)
      11.2.7 Rest of Asia Pacific (APAC)
   11.3 Basis Point Share (BPS) Analysis by Country
   11.4 Absolute $ Opportunity Assessment by Country
   11.5 Market Attractiveness Analysis by Country
   11.6 Asia Pacific GaN High-electron-mobility Transistor Market Size Forecast by Type
      11.6.1 100V
      11.6.2 400V
      11.6.3 600V
      11.6.4 650V
   11.7 Basis Point Share (BPS) Analysis by Type 
   11.8 Absolute $ Opportunity Assessment by Type 
   11.9 Market Attractiveness Analysis by Type
   11.10 Asia Pacific GaN High-electron-mobility Transistor Market Size Forecast by Applications
      11.10.1 Consumer Electronics
      11.10.2 Automotive
      11.10.3 Medical Industry
      11.10.4 Others
   11.11 Basis Point Share (BPS) Analysis by Applications 
   11.12 Absolute $ Opportunity Assessment by Applications 
   11.13 Market Attractiveness Analysis by Applications

Chapter 12 Latin America GaN High-electron-mobility Transistor Analysis and Forecast
   12.1 Introduction
   12.2 Latin America GaN High-electron-mobility Transistor Market Size Forecast by Country
      12.2.1 Brazil
      12.2.2 Mexico
      12.2.3 Rest of Latin America (LATAM)
   12.3 Basis Point Share (BPS) Analysis by Country
   12.4 Absolute $ Opportunity Assessment by Country
   12.5 Market Attractiveness Analysis by Country
   12.6 Latin America GaN High-electron-mobility Transistor Market Size Forecast by Type
      12.6.1 100V
      12.6.2 400V
      12.6.3 600V
      12.6.4 650V
   12.7 Basis Point Share (BPS) Analysis by Type 
   12.8 Absolute $ Opportunity Assessment by Type 
   12.9 Market Attractiveness Analysis by Type
   12.10 Latin America GaN High-electron-mobility Transistor Market Size Forecast by Applications
      12.10.1 Consumer Electronics
      12.10.2 Automotive
      12.10.3 Medical Industry
      12.10.4 Others
   12.11 Basis Point Share (BPS) Analysis by Applications 
   12.12 Absolute $ Opportunity Assessment by Applications 
   12.13 Market Attractiveness Analysis by Applications

Chapter 13 Middle East & Africa (MEA) GaN High-electron-mobility Transistor Analysis and Forecast
   13.1 Introduction
   13.2 Middle East & Africa (MEA) GaN High-electron-mobility Transistor Market Size Forecast by Country
      13.2.1 Saudi Arabia
      13.2.2 South Africa
      13.2.3 UAE
      13.2.4 Rest of Middle East & Africa (MEA)
   13.3 Basis Point Share (BPS) Analysis by Country
   13.4 Absolute $ Opportunity Assessment by Country
   13.5 Market Attractiveness Analysis by Country
   13.6 Middle East & Africa (MEA) GaN High-electron-mobility Transistor Market Size Forecast by Type
      13.6.1 100V
      13.6.2 400V
      13.6.3 600V
      13.6.4 650V
   13.7 Basis Point Share (BPS) Analysis by Type 
   13.8 Absolute $ Opportunity Assessment by Type 
   13.9 Market Attractiveness Analysis by Type
   13.10 Middle East & Africa (MEA) GaN High-electron-mobility Transistor Market Size Forecast by Applications
      13.10.1 Consumer Electronics
      13.10.2 Automotive
      13.10.3 Medical Industry
      13.10.4 Others
   13.11 Basis Point Share (BPS) Analysis by Applications 
   13.12 Absolute $ Opportunity Assessment by Applications 
   13.13 Market Attractiveness Analysis by Applications

Chapter 14 Competition Landscape 
   14.1 GaN High-electron-mobility Transistor Market: Competitive Dashboard
   14.2 Global GaN High-electron-mobility Transistor Market: Market Share Analysis, 2019
   14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy) 
      14.3.1 Nexperia
      14.3.2 GaN Systems
      14.3.3 Infineon Technologies
      14.3.4 STMicroelectronics
      14.3.5 TI
      14.3.6 Renesas
      14.3.7 ON Semiconductor
      14.3.8 Fujitsu
      14.3.9 Nexperia

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