Market Overview:
The global GaN power discrete device market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The market growth can be attributed to the increasing demand for energy-efficient and high-power devices across different applications. Additionally, the growing demand for miniaturization of electronic devices is also contributing to the growth of this market. The global GaN power discrete device market can be segmented on the basis of type and application. On the basis of type, the market can be divided into embedded type and ordinary type. The embedded type segment is expected to grow at a higher CAGR during the forecast period as compared to other segments owing to its high efficiency and low heat dissipation properties. On the basis of application, consumer electronics, IT & telecommunications, automotive, aerospace & defense and others are some major segments that have been considered in this study. Among these applications, consumer electronics held a dominant share in 2017 and is projected to maintain its dominance throughoutthe forecast period due To Increasing Demand For Smartphones And Tablets Globally .
Product Definition:
A GaN power discrete device is a semiconductor device that uses gallium nitride as the primary material in its construction. These devices are used to control and regulate the flow of electrical current in power systems, making them an important part of modern energy infrastructure.
Embedded Type:
The global embedded type market size was valued at USD 5.5 billion in 2016 and is expected to grow at a CAGR of XX% over the forecast period. Embedded types are low-level software that runs on hardware, which enables them to share data with the host system using simple APIs (application programming interfaces).
Embedded systems have gained prominence due to their ability to deliver high performance as compared to conventional systems comprising standalone applications and monolithic controllers.
Ordinary Type:
The ordinary type is a basic building block of semiconductor industry. It has many applications such as LEDs, LCDs, diodes, transistors and other power devices. The current trend in the market is to use silicon wafers as an alternative to sapphire for manufacturing ICs due to cost effectiveness and stability of the former at high temperatures.
Application Insights:
The consumer electronics segment accounted for the largest market share in 2017 and is anticipated to continue its dominance over the forecast period. The growing demand for high-quality semiconductors, which are used in a wide range of products including smartphones, flat panels TVs and washing machines is expected to drive product demand. Moreover, increasing penetration of smart devices across various applications such as LED lighting systems, body worn cameras and medical imaging equipment will further propel industry growth over the coming years.
The IT & telecommunication sector accounted for significant market share in 2017 owing to rapidly growing adoption of GaN power discrete devices across telecom base stations and optical networks on account of their benefits including low maintenance cost compared to conventional power amplifiers as well as superior quality factor resulting in higher data transmission rates with less energy consumption. In addition, these products also exhibit better performance characteristics than other amplifiers when it comes time to increase network capacity or upgrade existing infrastructure which is likely drive their demand further during the forecast period.
Regional Analysis:
The Asia Pacific dominated the global market in 2017 and is expected to continue its dominance over the forecast period. The growth can be attributed to increasing demand for high-performance computing systems, rapid development of smart devices, and rising investments in renewable energy generation. China accounted for a major share owing to heavy government subsidies on solar panels coupled with growing adoption of clean energy sources such as wind and geothermal power.
North America is projected to witness significant growth over the next eight years owing to strong support from U.S.-based companies such as Qualcomm Inc., Texas Instruments Inc., Avago Technologies Ltd.
Growth Factors:
- Increasing demand for energy-efficient devices: The global market for energy-efficient devices is expected to grow at a CAGR of more than 7% from 2016 to 2020. This is due to the increasing awareness among consumers about the need to save energy and adopt energy-efficient measures. GaN power discrete devices are more efficient than traditional silicon power discrete devices, making them an attractive option for manufacturers of these devices.
- Rising demand from the automotive sector: The global automotive market is expected to grow at a CAGR of more than 5% from 2016 to 2020. This growth can be attributed to the increasing demand for luxury cars and SUVs in developed countries and the rising middle class in developing countries. GaN power discrete devices are finding increased use in automotive applications due their high efficiency, low weight, and small size.
- Growing demand from the telecommunications sector: The global telecommunications market is expected to grow at a CAGR of more than 6% from 2016to 2020 owingto rising internet penetration ratesandthe growing popularityofsmartphonesandtablets .GaNPowerelectronicdevicesareidealfortelecommunicationsapplicationsduetotheirhighefficiencyandlowpowerconsumption .
- . Rising investment in renewableenergy sources:TheglobalinvestmentinrenewableenergysourcesisexpectedtocontinuegrowingattheCAGRofmorethan10%from2016t2020 .Thisgrowthcanbeatt
Scope Of The Report
Report Attributes
Report Details
Report Title
GaN Power Discrete Device Market Research Report
By Type
Embedded Type, Ordinary Type
By Application
Consumer Electronics, IT & Telecommunications, Automotive, Aerospace & Defense, Others
By Companies
Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Fujitsu Limited, Transphorm Inc, Cree Incorporated, OSRAM Opto Semiconductors, Qorvo
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
196
Number of Tables & Figures
138
Customization Available
Yes, the report can be customized as per your need.
Global GaN Power Discrete Device Market Report Segments:
The global GaN Power Discrete Device market is segmented on the basis of:
Types
Embedded Type, Ordinary Type
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Consumer Electronics, IT & Telecommunications, Automotive, Aerospace & Defense, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Efficient Power Conversion Corporation
- NXP Semiconductors N.V.
- GaN Systems Inc
- Texas Instruments
- Infineon Technologies AG
- Fujitsu Limited
- Transphorm Inc
- Cree Incorporated
- OSRAM Opto Semiconductors
- Qorvo
Highlights of The GaN Power Discrete Device Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- Embedded Type
- Ordinary Type
- By Application:
- Consumer Electronics
- IT & Telecommunications
- Automotive
- Aerospace & Defense
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the GaN Power Discrete Device Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
GaN Power Discrete Device is a type of semiconductor device that uses gallium nitride (GaN) as the material for its transistors and diodes. GaN devices are more efficient than traditional silicon-based electronics, making them ideal for high-power applications such as solar energy and LED lighting.
Some of the major companies in the gan power discrete device market are Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Fujitsu Limited, Transphorm Inc, Cree Incorporated, OSRAM Opto Semiconductors, Qorvo.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 GaN Power Discrete Device Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 GaN Power Discrete Device Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 GaN Power Discrete Device Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the GaN Power Discrete Device Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global GaN Power Discrete Device Market Size & Forecast, 2020-2028
4.5.1 GaN Power Discrete Device Market Size and Y-o-Y Growth
4.5.2 GaN Power Discrete Device Market Absolute $ Opportunity
Chapter 5 Global Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Market Size Forecast by Type
5.2.1 Embedded Type
5.2.2 Ordinary Type
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Market Size Forecast by Applications
6.2.1 Consumer Electronics
6.2.2 IT & Telecommunications
6.2.3 Automotive
6.2.4 Aerospace & Defense
6.2.5 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global GaN Power Discrete Device Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 GaN Power Discrete Device Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Analysis and Forecast
9.1 Introduction
9.2 North America Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Market Size Forecast by Type
9.6.1 Embedded Type
9.6.2 Ordinary Type
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Market Size Forecast by Applications
9.10.1 Consumer Electronics
9.10.2 IT & Telecommunications
9.10.3 Automotive
9.10.4 Aerospace & Defense
9.10.5 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Analysis and Forecast
10.1 Introduction
10.2 Europe Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Market Size Forecast by Type
10.6.1 Embedded Type
10.6.2 Ordinary Type
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Market Size Forecast by Applications
10.10.1 Consumer Electronics
10.10.2 IT & Telecommunications
10.10.3 Automotive
10.10.4 Aerospace & Defense
10.10.5 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Market Size Forecast by Type
11.6.1 Embedded Type
11.6.2 Ordinary Type
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Market Size Forecast by Applications
11.10.1 Consumer Electronics
11.10.2 IT & Telecommunications
11.10.3 Automotive
11.10.4 Aerospace & Defense
11.10.5 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Analysis and Forecast
12.1 Introduction
12.2 Latin America Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Market Size Forecast by Type
12.6.1 Embedded Type
12.6.2 Ordinary Type
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Market Size Forecast by Applications
12.10.1 Consumer Electronics
12.10.2 IT & Telecommunications
12.10.3 Automotive
12.10.4 Aerospace & Defense
12.10.5 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Market Size Forecast by Type
13.6.1 Embedded Type
13.6.2 Ordinary Type
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Market Size Forecast by Applications
13.10.1 Consumer Electronics
13.10.2 IT & Telecommunications
13.10.3 Automotive
13.10.4 Aerospace & Defense
13.10.5 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 GaN Power Discrete Device Market: Competitive Dashboard
14.2 Global GaN Power Discrete Device Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Efficient Power Conversion Corporation
14.3.2 NXP Semiconductors N.V.
14.3.3 GaN Systems Inc
14.3.4 Texas Instruments
14.3.5 Infineon Technologies AG
14.3.6 Fujitsu Limited
14.3.7 Transphorm Inc
14.3.8 Cree Incorporated
14.3.9 OSRAM Opto Semiconductors
14.3.10 Qorvo
