Market Overview:
The global IGBT gate bipolar transistors STATCOM market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The growth in this market can be attributed to the increasing demand for electric power and the growing need for voltage regulation and stabilization. In addition, the increasing adoption of renewable energy sources is also contributing to the growth of this market. The global IGBT gate bipolar transistors STATCOM market can be segmented on the basis of type, application, and region. On the basis of type, it can be divided into high voltage IGBT gate bipolar transistors STATCOM and low voltage IGBT gate bipolar transistors STATCOM. On the basis of application, it can be classified into electric utilities, renewable energy, industrial & manufacturing, and others. Region-wise, it can be segmented into North America (U.S., Canada), Latin America (Mexico), Europe (Germany), Asia Pacific (China India Japan South Korea Australia New Zealand) Middle East & Africa (Saudi Arabia UAE Qatar Bahrain Kuwait Oman).
Product Definition:
STATCOM stands for Static Compensator. It is a power electronics device used to regulate voltage and current in an electrical system. IGBT Gate Bipolar Transistors STATCOMs are important because they can rapidly respond to changes in the electrical system, which makes them ideal for use in applications such as wind farms and solar arrays.
High Voltage IGBT Gate Bipolar Transistors STATCOM:
High voltage IGBT gate bipolar transistors STATCOM is a new technology that has been developed for power electronic applications. It overcomes the drawbacks of traditional devices by offering higher switching speed and more efficient use of energy. The technology is expected to grow at a significant rate owing to its application in high-power electronic systems such as power supplies, electric vehicles, and renewable energy sources.
Low Voltage IGBT Gate Bipolar Transistors STATCOM:
IGBT gate bipolar transistors STATCOM is a new technology that was introduced by the Japanese manufacturers such as Nippon Chemi-Com and Sumitomo Electric Industries, Ltd. in the year 2000. The IGBT (Insulated Gate Bipolar) has replaced the older technologies of power devices such as MOSFET and JUNCTION transistor in modern electronic equipment to reduce switching losses at high frequencies.
Application Insights:
The electric utilities segment dominated the global IGBT gate bipolar transistor STATCOM market in terms of revenue in 2017. The segment is expected to witness significant growth over the forecast period owing to increasing demand for power generation and transmission & distribution infrastructure across various regions, including Asia Pacific, North America and Europe.
The renewable energy segment is anticipated to witness considerable growth over the forecast period owing to growing government support for promoting investments in R&D for developing cost-effective solar photovoltaic (PV) modules and wind turbines across various countries including China, Germany, India Japan etc. Furthermore, rising awareness regarding clean energy sources among consumers is also likely to propel industry expansion over the coming years.
Regional Analysis:
Asia Pacific dominated the global market in 2017 and is expected to continue its dominance over the forecast period. The growth of this region can be attributed to increasing demand for energy, especially from developing countries such as China and India. Rising industrialization coupled with growing manufacturing activities in these economies is anticipated to drive STATCOM demand over the forecast period.
The Asia Pacific regional market was followed by Europe which accounted for a share of more than 20% in 2017 owing to high penetration rate of IGBTs across various applications including electric utilities, renewable energy, industrial & manufacturing sectors. Countries such as Germany are projecteded dominate this region owing tom their strong presence across industries including automotive, aerospace & defense, consumer electronics etc.
Growth Factors:
- Increasing demand for energy-efficient solutions: The global market for IGBT Gate Bipolar Transistors STATCOM is expected to grow at a CAGR of over 9% during the forecast period. This can be attributed to the increasing demand for energy-efficient solutions across various industries.
- Rising investments in renewable energy: The growth of the IGBT Gate Bipolar Transistors STATCOM market is also driven by the rising investments in renewable energy sources, such as solar and wind power, across the globe.
- Growing popularity of smart grids: Another key factor driving the growth of this market is the growing popularity of smart grids, which are helping to improve grid efficiency and reliability while reducing emissions and costs associated with power generation and distribution.
- Proliferation of data centers: The proliferation of data centers is also contributing significantly to the growth of this market, as these facilities require reliable and efficient power systems that can handle high loads without any interruptions or downtime issues.
Scope Of The Report
Report Attributes
Report Details
Report Title
IGBT Gate Bipolar Transistors STATCOM Market Research Report
By Type
High Voltage IGBT Gate Bipolar Transistors STATCOM, Low Voltage IGBT Gate Bipolar Transistors STATCOM
By Application
Electric Utilities, Renewable Energy, Industrial & Manufacturing, Others
By Companies
Hitachi, Siemens, Rongxin, Windsun Science Technology Co.,Ltd., Sieyuan Electric Co., Ltd., TBEA Co.,Ltd., Mitsubishi Electric, GE, Shandong Taikai Power Electronic Co.,Ltd., Nari Technology, Shenzhen Hopewind Electric Co., Ltd., AMSC, Comsys AB, Ingeteam, Beijing In-power Electric Co., Ltd
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
172
Number of Tables & Figures
121
Customization Available
Yes, the report can be customized as per your need.
Global IGBT Gate Bipolar Transistors STATCOM Market Report Segments:
The global IGBT Gate Bipolar Transistors STATCOM market is segmented on the basis of:
Types
High Voltage IGBT Gate Bipolar Transistors STATCOM, Low Voltage IGBT Gate Bipolar Transistors STATCOM
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Electric Utilities, Renewable Energy, Industrial & Manufacturing, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Hitachi
- Siemens
- Rongxin
- Windsun Science Technology Co.,Ltd.
- Sieyuan Electric Co., Ltd.
- TBEA Co.,Ltd.
- Mitsubishi Electric
- GE
- Shandong Taikai Power Electronic Co.,Ltd.
- Nari Technology
- Shenzhen Hopewind Electric Co., Ltd.
- AMSC
- Comsys AB
- Ingeteam
- Beijing In-power Electric Co., Ltd
Highlights of The IGBT Gate Bipolar Transistors STATCOM Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- High Voltage IGBT Gate Bipolar Transistors STATCOM
- Low Voltage IGBT Gate Bipolar Transistors STATCOM
- By Application:
- Electric Utilities
- Renewable Energy
- Industrial & Manufacturing
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the IGBT Gate Bipolar Transistors STATCOM Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
A STATCOM is a type of power amplifier that uses bipolar transistors as its switching devices. The name comes from the fact that these amplifiers are typically used to control the output voltage of a power plant, or to provide redundancy for other systems in case of failure.
Some of the key players operating in the igbt gate bipolar transistors statcom market are Hitachi, Siemens, Rongxin, Windsun Science Technology Co.,Ltd., Sieyuan Electric Co., Ltd., TBEA Co.,Ltd., Mitsubishi Electric, GE, Shandong Taikai Power Electronic Co.,Ltd., Nari Technology, Shenzhen Hopewind Electric Co., Ltd., AMSC, Comsys AB, Ingeteam, Beijing In-power Electric Co., Ltd.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 IGBT Gate Bipolar Transistors STATCOM Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 IGBT Gate Bipolar Transistors STATCOM Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 IGBT Gate Bipolar Transistors STATCOM Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the IGBT Gate Bipolar Transistors STATCOM Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global IGBT Gate Bipolar Transistors STATCOM Market Size & Forecast, 2018-2028
4.5.1 IGBT Gate Bipolar Transistors STATCOM Market Size and Y-o-Y Growth
4.5.2 IGBT Gate Bipolar Transistors STATCOM Market Absolute $ Opportunity
Chapter 5 Global IGBT Gate Bipolar Transistors STATCOM Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Type
5.2.1 High Voltage IGBT Gate Bipolar Transistors STATCOM
5.2.2 Low Voltage IGBT Gate Bipolar Transistors STATCOM
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global IGBT Gate Bipolar Transistors STATCOM Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Applications
6.2.1 Electric Utilities
6.2.2 Renewable Energy
6.2.3 Industrial & Manufacturing
6.2.4 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global IGBT Gate Bipolar Transistors STATCOM Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America IGBT Gate Bipolar Transistors STATCOM Analysis and Forecast
9.1 Introduction
9.2 North America IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Type
9.6.1 High Voltage IGBT Gate Bipolar Transistors STATCOM
9.6.2 Low Voltage IGBT Gate Bipolar Transistors STATCOM
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Applications
9.10.1 Electric Utilities
9.10.2 Renewable Energy
9.10.3 Industrial & Manufacturing
9.10.4 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe IGBT Gate Bipolar Transistors STATCOM Analysis and Forecast
10.1 Introduction
10.2 Europe IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Type
10.6.1 High Voltage IGBT Gate Bipolar Transistors STATCOM
10.6.2 Low Voltage IGBT Gate Bipolar Transistors STATCOM
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Applications
10.10.1 Electric Utilities
10.10.2 Renewable Energy
10.10.3 Industrial & Manufacturing
10.10.4 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific IGBT Gate Bipolar Transistors STATCOM Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Type
11.6.1 High Voltage IGBT Gate Bipolar Transistors STATCOM
11.6.2 Low Voltage IGBT Gate Bipolar Transistors STATCOM
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Applications
11.10.1 Electric Utilities
11.10.2 Renewable Energy
11.10.3 Industrial & Manufacturing
11.10.4 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America IGBT Gate Bipolar Transistors STATCOM Analysis and Forecast
12.1 Introduction
12.2 Latin America IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Type
12.6.1 High Voltage IGBT Gate Bipolar Transistors STATCOM
12.6.2 Low Voltage IGBT Gate Bipolar Transistors STATCOM
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Applications
12.10.1 Electric Utilities
12.10.2 Renewable Energy
12.10.3 Industrial & Manufacturing
12.10.4 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) IGBT Gate Bipolar Transistors STATCOM Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Type
13.6.1 High Voltage IGBT Gate Bipolar Transistors STATCOM
13.6.2 Low Voltage IGBT Gate Bipolar Transistors STATCOM
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) IGBT Gate Bipolar Transistors STATCOM Market Size Forecast by Applications
13.10.1 Electric Utilities
13.10.2 Renewable Energy
13.10.3 Industrial & Manufacturing
13.10.4 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 IGBT Gate Bipolar Transistors STATCOM Market: Competitive Dashboard
14.2 Global IGBT Gate Bipolar Transistors STATCOM Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Hitachi
14.3.2 Siemens
14.3.3 Rongxin
14.3.4 Windsun Science Technology Co.,Ltd.
14.3.5 Sieyuan Electric Co., Ltd.
14.3.6 TBEA Co.,Ltd.
14.3.7 Mitsubishi Electric
14.3.8 GE
14.3.9 Shandong Taikai Power Electronic Co.,Ltd.
14.3.10 Nari Technology
14.3.11 Shenzhen Hopewind Electric Co., Ltd.
14.3.12 AMSC
14.3.13 Comsys AB
14.3.14 Ingeteam
14.3.15 Beijing In-power Electric Co., Ltd
