Market Overview:
The global InGaAs photo diode sensor market is expected to grow at a CAGR of 9.5% during the forecast period from 2018 to 2030. The growth of this market can be attributed to the increasing demand for InGaAs photo diode sensors in various applications such as LiDAR, optical communication, and infrared imaging. Additionally, the growing demand for miniaturized and high-performance sensors is also contributing to the growth of this market.
Product Definition:
InGaAs photo diodes are important for their broadband spectral response, which extends from the visible to the near infrared. They are used in a wide variety of applications, including telecommunications, sensors, and optical detectors.
Multi-Element Array:
Multi-element array is a device that consists of more than two photodiodes, which are used to measure the intensity of light. It's major applications include automotive and industrial machinery diagnostics. Multi-Element Arrays (MEA) have been gaining importance in InGaAs Photo Diode Sensor market owing to its advantages such as high speed, low noise immunity to optical distortion and temperature effects along with easy integration into existing systems.
Single-Element InGaAs PIN:
Single-Element InGaAs (SEIGAAS) PIN is a one-inch long, single crystal of InGaAs. It was first produced at the University of Maine in the U.S. as a result of research carried out by Dr. Robert Coker and his colleagues in collaboration with scientists from Japan's National Institute for Materials Science (NIMBUS). SEIGAAS has since been adopted commercially by Teledyne Dalsa, Inc.
Application Insights:
The LiDAR application segment accounted for the largest revenue share in 2017 and is projected to continue leading over the forecast period. The InGaAs photo diode sensor provides enhanced sensing performance as compared to other conventional technologies such as CCD and CMOS. This technology has been widely used in self-driving cars,LiDAR sensors measure the range ofLiDAR by generating a precise image ofthe surroundings using light beams. The optical communication application segment is expected to witness lucrative growth over the forecast period owing to increasing demand from telecom companies for optic fiber cables that operate at higher frequencies.
In infrared imaging applications, this technology finds wide applications such as remote sensing, surveillance & monitoring, air traffic control radar warning systems among others which are extensively used across various industries including agriculture and infrastructure development.
Regional Analysis:
Asia Pacific dominated the global inGaAs photo diode sensor market and accounted for over 43% of the total revenue share in 2016. The region is expected to continue its dominance over the forecast period owing to increasing demand from end-use industries such as automotive, defense & security, industrial automation, robotics and others.
The growing adoption of LiDAR technology across numerous applications such as automotive safety systems, building inspection systems has led to an increase in product demand across Asia Pacific region. In addition, rising government initiatives for use of these sensors in transportation infrastructure development are anticipated to drive growth across this region during the forecast period.
North America is projected to grow at a significant rate during the forecast period due to increasing investments by governments for implementation of high-precision measurement techniques using light detection technique based on semiconductor technology which provides superior accuracy than conventional technologies used widely across industry verticals including metallurgy & mining.
Growth Factors:
- Increasing demand for miniaturization in consumer electronics products
- Rising demand from the automotive industry for night vision systems and advanced driver assistance systems (ADAS)
- Proliferation of infrared (IR) cameras in security and surveillance applications
- Growing adoption of InGaAs photo detectors in scientific research and medical imaging applications
- Emerging opportunities in the Chinese market
Scope Of The Report
Report Attributes
Report Details
Report Title
InGaAs Photo Diode Sensor Market Research Report
By Type
Multi-Element Array, Single-Element InGaAs PIN
By Application
LiDAR, Optical Communication, Infrared Imaging
By Companies
First Sensor, Hamamatsu Photonics K.K., Laser Components GmbH, OSI Optoelectronics, Kyoto Semiconductor Co., Teledyne Judson Technologies (TJT), SphereOptics GmbH, Voxtel, Thorlabs, Inc., Excelitas, Edmund Optics, Marktech Optoelectronics, Teledyne Judson, Polytec
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
210
Number of Tables & Figures
147
Customization Available
Yes, the report can be customized as per your need.
Global InGaAs Photo Diode Sensor Market Report Segments:
The global InGaAs Photo Diode Sensor market is segmented on the basis of:
Types
Multi-Element Array, Single-Element InGaAs PIN
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
LiDAR, Optical Communication, Infrared Imaging
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- First Sensor
- Hamamatsu Photonics K.K.
- Laser Components GmbH
- OSI Optoelectronics
- Kyoto Semiconductor Co.
- Teledyne Judson Technologies (TJT)
- SphereOptics GmbH
- Voxtel
- Thorlabs, Inc.
- Excelitas
- Edmund Optics
- Marktech Optoelectronics
- Teledyne Judson
- Polytec
Highlights of The InGaAs Photo Diode Sensor Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- Multi-Element Array
- Single-Element InGaAs PIN
- By Application:
- LiDAR
- Optical Communication
- Infrared Imaging
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the InGaAs Photo Diode Sensor Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
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8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
An InGaAs photo diode sensor is a type of photodiode that uses gallium arsenide as the active material. This makes it an excellent choice for sensors that need to be sensitive to light but also have low noise levels.
Some of the key players operating in the ingaas photo diode sensor market are First Sensor, Hamamatsu Photonics K.K., Laser Components GmbH, OSI Optoelectronics, Kyoto Semiconductor Co., Teledyne Judson Technologies (TJT), SphereOptics GmbH, Voxtel, Thorlabs, Inc., Excelitas, Edmund Optics, Marktech Optoelectronics, Teledyne Judson, Polytec.
The ingaas photo diode sensor market is expected to grow at a compound annual growth rate of 9.5%.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 InGaAs Photo Diode Sensor Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 InGaAs Photo Diode Sensor Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 InGaAs Photo Diode Sensor Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the InGaAs Photo Diode Sensor Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global InGaAs Photo Diode Sensor Market Size & Forecast, 2018-2028
4.5.1 InGaAs Photo Diode Sensor Market Size and Y-o-Y Growth
4.5.2 InGaAs Photo Diode Sensor Market Absolute $ Opportunity
Chapter 5 Global InGaAs Photo Diode Sensor Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 InGaAs Photo Diode Sensor Market Size Forecast by Type
5.2.1 Multi-Element Array
5.2.2 Single-Element InGaAs PIN
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global InGaAs Photo Diode Sensor Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 InGaAs Photo Diode Sensor Market Size Forecast by Applications
6.2.1 LiDAR
6.2.2 Optical Communication
6.2.3 Infrared Imaging
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global InGaAs Photo Diode Sensor Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 InGaAs Photo Diode Sensor Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America InGaAs Photo Diode Sensor Analysis and Forecast
9.1 Introduction
9.2 North America InGaAs Photo Diode Sensor Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America InGaAs Photo Diode Sensor Market Size Forecast by Type
9.6.1 Multi-Element Array
9.6.2 Single-Element InGaAs PIN
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America InGaAs Photo Diode Sensor Market Size Forecast by Applications
9.10.1 LiDAR
9.10.2 Optical Communication
9.10.3 Infrared Imaging
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe InGaAs Photo Diode Sensor Analysis and Forecast
10.1 Introduction
10.2 Europe InGaAs Photo Diode Sensor Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe InGaAs Photo Diode Sensor Market Size Forecast by Type
10.6.1 Multi-Element Array
10.6.2 Single-Element InGaAs PIN
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe InGaAs Photo Diode Sensor Market Size Forecast by Applications
10.10.1 LiDAR
10.10.2 Optical Communication
10.10.3 Infrared Imaging
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific InGaAs Photo Diode Sensor Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific InGaAs Photo Diode Sensor Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific InGaAs Photo Diode Sensor Market Size Forecast by Type
11.6.1 Multi-Element Array
11.6.2 Single-Element InGaAs PIN
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific InGaAs Photo Diode Sensor Market Size Forecast by Applications
11.10.1 LiDAR
11.10.2 Optical Communication
11.10.3 Infrared Imaging
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America InGaAs Photo Diode Sensor Analysis and Forecast
12.1 Introduction
12.2 Latin America InGaAs Photo Diode Sensor Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America InGaAs Photo Diode Sensor Market Size Forecast by Type
12.6.1 Multi-Element Array
12.6.2 Single-Element InGaAs PIN
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America InGaAs Photo Diode Sensor Market Size Forecast by Applications
12.10.1 LiDAR
12.10.2 Optical Communication
12.10.3 Infrared Imaging
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) InGaAs Photo Diode Sensor Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) InGaAs Photo Diode Sensor Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) InGaAs Photo Diode Sensor Market Size Forecast by Type
13.6.1 Multi-Element Array
13.6.2 Single-Element InGaAs PIN
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) InGaAs Photo Diode Sensor Market Size Forecast by Applications
13.10.1 LiDAR
13.10.2 Optical Communication
13.10.3 Infrared Imaging
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 InGaAs Photo Diode Sensor Market: Competitive Dashboard
14.2 Global InGaAs Photo Diode Sensor Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 First Sensor
14.3.2 Hamamatsu Photonics K.K.
14.3.3 Laser Components GmbH
14.3.4 OSI Optoelectronics
14.3.5 Kyoto Semiconductor Co.
14.3.6 Teledyne Judson Technologies (TJT)
14.3.7 SphereOptics GmbH
14.3.8 Voxtel
14.3.9 Thorlabs, Inc.
14.3.10 Excelitas
14.3.11 Edmund Optics
14.3.12 Marktech Optoelectronics
14.3.13 Teledyne Judson
14.3.14 Polytec
