Latest Update: Impact of current COVID-19 situation has been considered in this report while making the analysis.
Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type (High Voltage, Medium Voltage, Low Voltage), By Application (Consumer Electronics, Inverter & UPS, Electric Vehicle, Industrial System, Others (Medical Devices & Traction), Energy & Power) and Region (North America, Latin America, Europe, Asia Pacific and Middle East & Africa), Forecast From 2022 To 2030-report

Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type (High Voltage, Medium Voltage, Low Voltage), By Application (Consumer Electronics, Inverter & UPS, Electric Vehicle, Industrial System, Others (Medical Devices & Traction), Energy & Power) and Region (North America, Latin America, Europe, Asia Pacific and Middle East & Africa), Forecast From 2022 To 2030

Report ID: 283382 4200 Electronics & Semiconductor 377 233 Pages 4.9 (38)
                                          

Market Overview:


The global insulated gate bipolar transistor (IGBT) and metal oxide field effect transistor (MOSFET) market is expected to grow at a CAGR of 6.5% from 2018 to 2030. The growth of the market can be attributed to the increasing demand for energy-efficient devices, rising demand for electric vehicles, and growing industrialization in developing countries. The high voltage segment is expected to hold the largest share of the global IGBT and MOSFET market in 2018. This segment is projected to grow at a CAGR of 7% from 2018 to 2030. The growth can be attributed to the increasing demand for high-voltage devices in consumer electronics, inverter & UPS, electric vehicle, industrial system, and other applications. The Asia Pacific region is expected to hold the largest share of the global IGBT and MOSFET market in 2018.


Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Industry Outlook


Product Definition:


Insulated gate bipolar transistor (IGBT) is a three-terminal power semiconductor device with a built-in insulated gate. IGBTs are usually used as an electronic switch in devices such as motor controllers, power supplies, and welding machines.


A metal oxide field effect transistor (MOSFET) is a four-terminal device that can be used for controlling the flow of electric current. MOSFETs are usually used in digital circuits, where they are responsible for switching currents on and off.


High Voltage:


High voltage is the electrical energy above the normal voltage of a transistor. The normal range of voltages for a semiconductor is from zero to VCC (Voltage Control) where VCC stands for the power supply rail and generally varies between 4.2V and 5.0V in ICs, while some devices like LED require less than 0 - 3VDC, others like CRT monitor need more than 7VDC.


Medium Voltage:


The medium voltage segment includes power supply between 33KV and 1MV. The usage of this electricity depends on the application of the product, but it is widely used in high voltage insulated gate bipolar transistors and metal oxide field effect transistors (MOSFET).


Application Insights:


The global insulated gate bipolar transistor market is segmented based on application into consumer electronics, inverter & UPS, electric vehicle, industrial system and other applications (medical devices & traction) and energy & power. The consumer electronics segment accounted for the largest share in 2017 owing to increasing demand for smartphones across the globe. In addition, growing demand for smart wearable devices is expected to drive the growth of this segment over the forecast period.


Insulated gate bipolar transistors are used as switches in various appliances such as refrigerators, washing machines etc., which operate on low voltage level of around 25V-AC. They are also used in electronic products such as microwave ovens that have high insulation resistance and require minimal maintenance due to their small size compared with conventional thyristor or triac valves made of silicon or germanium respectively.


Regional Analysis:


Asia Pacific is expected to be the fastest-growing regional market over the forecast period. The growth can be attributed to rising demand for energy and power in developing countries such as China, India, and Japan. Moreover, increasing industrialization coupled with growing consumer electronics production will drive the regional market further. Europe is also estimated to witness considerable growth over the coming years owing to rising product demand in major countries including Germany and France.


Growth Factors:


  • Increasing demand for energy-efficient and high-performance electronics devices
  • Rising demand from the automotive sector
  • Growing popularity of semiconductor devices in consumer electronics market
  • Proliferation of Internet of Things (IoT) and connected devices
  • Increasing investments in research and development (R&D) activities

Scope Of The Report

Report Attributes

Report Details

Report Title

Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Research Report

By Type

High Voltage, Medium Voltage, Low Voltage

By Application

Consumer Electronics, Inverter & UPS, Electric Vehicle, Industrial System, Others (Medical Devices & Traction), Energy & Power

By Companies

Fairchild Semiconductor International Inc, STMicroelectronics, ABB Ltd, Hitachi Power Semiconductor Device Ltd, Toshiba Corporation, Mitsubishi Electric Corporation, Infineon Technologies AG

Regions Covered

North America, Europe, APAC, Latin America, MEA

Base Year

2021

Historical Year

2019 to 2020 (Data from 2010 can be provided as per availability)

Forecast Year

2030

Number of Pages

233

Number of Tables & Figures

164

Customization Available

Yes, the report can be customized as per your need.


Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Report Segments:

The global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor market is segmented on the basis of:

Types

High Voltage, Medium Voltage, Low Voltage

The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.

Applications

Consumer Electronics, Inverter & UPS, Electric Vehicle, Industrial System, Others (Medical Devices & Traction), Energy & Power

The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.

Some of the companies that are profiled in this report are:

  1. Fairchild Semiconductor International Inc
  2. STMicroelectronics
  3. ABB Ltd
  4. Hitachi Power Semiconductor Device Ltd
  5. Toshiba Corporation
  6. Mitsubishi Electric Corporation
  7. Infineon Technologies AG

Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Overview


Highlights of The Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Report:

  1. The market structure and projections for the coming years.
  2. Drivers, restraints, opportunities, and current trends of market.
  3. Historical data and forecast.
  4. Estimations for the forecast period 2030.
  5. Developments and trends in the market.
  6. By Type:

    1. High Voltage
    2. Medium Voltage
    3. Low Voltage
  1. By Application:

    1. Consumer Electronics
    2. Inverter & UPS
    3. Electric Vehicle
    4. Industrial System
    5. Others (Medical Devices & Traction)
    6. Energy & Power
  1. Market scenario by region, sub-region, and country.
  2. Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
  3. Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
  4. Government Policies, Macro & Micro economic factors are also included in the report.

We have studied the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.

Regional Analysis

  • North America
  • Europe
  • Asia Pacific
  • Middle East & Africa
  • Latin America

Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.

The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.

How you may use our products:

  • Correctly Positioning New Products
  • Market Entry Strategies
  • Business Expansion Strategies
  • Consumer Insights
  • Understanding Competition Scenario
  • Product & Brand Management
  • Channel & Customer Management
  • Identifying Appropriate Advertising Appeals

Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Statistics

8 Reasons to Buy This Report

  1. Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
  2. Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
  3. Implemented Robust Methodology to Prepare the Report
  4. Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
  5. Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
  6. Provides Information About the Top-winning Strategies Implemented by Industry Players.
  7. In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
  8. Customization of the Report Available

Frequently Asked Questions?


Insulated gate bipolar transistors (IGBTs) are a type of transistor that uses insulated gate electrodes to control the flow of current through the device. Metal oxide field effect transistors (MOSFETs) are similar, but use metal gates instead of insulation.

Some of the major companies in the insulated gate bipolar transistors and metal oxide field effect transistor market are Fairchild Semiconductor International Inc, STMicroelectronics, ABB Ltd, Hitachi Power Semiconductor Device Ltd, Toshiba Corporation, Mitsubishi Electric Corporation, Infineon Technologies AG.

The insulated gate bipolar transistors and metal oxide field effect transistor market is expected to grow at a compound annual growth rate of 6.5%.

                                            
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Overview    4.1 Introduction       4.1.1 Market Taxonomy       4.1.2 Market Definition       4.1.3 Macro-Economic Factors Impacting the Market Growth    4.2 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Dynamics       4.2.1 Market Drivers       4.2.2 Market Restraints       4.2.3 Market Opportunity    4.3 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market - Supply Chain Analysis       4.3.1 List of Key Suppliers       4.3.2 List of Key Distributors       4.3.3 List of Key Consumers    4.4 Key Forces Shaping the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market       4.4.1 Bargaining Power of Suppliers       4.4.2 Bargaining Power of Buyers       4.4.3 Threat of Substitution       4.4.4 Threat of New Entrants       4.4.5 Competitive Rivalry    4.5 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size & Forecast, 2018-2028       4.5.1 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size and Y-o-Y Growth       4.5.2 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Absolute $ Opportunity

Chapter 5 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Analysis and Forecast by Type
   5.1 Introduction
      5.1.1 Key Market Trends & Growth Opportunities by Type
      5.1.2 Basis Point Share (BPS) Analysis by Type
      5.1.3 Absolute $ Opportunity Assessment by Type
   5.2 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Type
      5.2.1 High Voltage
      5.2.2 Medium Voltage
      5.2.3 Low Voltage
   5.3 Market Attractiveness Analysis by Type

Chapter 6 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Analysis and Forecast by Applications
   6.1 Introduction
      6.1.1 Key Market Trends & Growth Opportunities by Applications
      6.1.2 Basis Point Share (BPS) Analysis by Applications
      6.1.3 Absolute $ Opportunity Assessment by Applications
   6.2 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Applications
      6.2.1 Consumer Electronics
      6.2.2 Inverter & UPS
      6.2.3 Electric Vehicle
      6.2.4 Industrial System
      6.2.5 Others (Medical Devices & Traction)
      6.2.6 Energy & Power
   6.3 Market Attractiveness Analysis by Applications

Chapter 7 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Analysis and Forecast by Region
   7.1 Introduction
      7.1.1 Key Market Trends & Growth Opportunities by Region
      7.1.2 Basis Point Share (BPS) Analysis by Region
      7.1.3 Absolute $ Opportunity Assessment by Region
   7.2 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Region
      7.2.1 North America
      7.2.2 Europe
      7.2.3 Asia Pacific
      7.2.4 Latin America
      7.2.5 Middle East & Africa (MEA)
   7.3 Market Attractiveness Analysis by Region

Chapter 8 Coronavirus Disease (COVID-19) Impact 
   8.1 Introduction 
   8.2 Current & Future Impact Analysis 
   8.3 Economic Impact Analysis 
   8.4 Government Policies 
   8.5 Investment Scenario

Chapter 9 North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Analysis and Forecast
   9.1 Introduction
   9.2 North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Country
      9.2.1 U.S.
      9.2.2 Canada
   9.3 Basis Point Share (BPS) Analysis by Country
   9.4 Absolute $ Opportunity Assessment by Country
   9.5 Market Attractiveness Analysis by Country
   9.6 North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Type
      9.6.1 High Voltage
      9.6.2 Medium Voltage
      9.6.3 Low Voltage
   9.7 Basis Point Share (BPS) Analysis by Type 
   9.8 Absolute $ Opportunity Assessment by Type 
   9.9 Market Attractiveness Analysis by Type
   9.10 North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Applications
      9.10.1 Consumer Electronics
      9.10.2 Inverter & UPS
      9.10.3 Electric Vehicle
      9.10.4 Industrial System
      9.10.5 Others (Medical Devices & Traction)
      9.10.6 Energy & Power
   9.11 Basis Point Share (BPS) Analysis by Applications 
   9.12 Absolute $ Opportunity Assessment by Applications 
   9.13 Market Attractiveness Analysis by Applications

Chapter 10 Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Analysis and Forecast
   10.1 Introduction
   10.2 Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Country
      10.2.1 Germany
      10.2.2 France
      10.2.3 Italy
      10.2.4 U.K.
      10.2.5 Spain
      10.2.6 Russia
      10.2.7 Rest of Europe
   10.3 Basis Point Share (BPS) Analysis by Country
   10.4 Absolute $ Opportunity Assessment by Country
   10.5 Market Attractiveness Analysis by Country
   10.6 Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Type
      10.6.1 High Voltage
      10.6.2 Medium Voltage
      10.6.3 Low Voltage
   10.7 Basis Point Share (BPS) Analysis by Type 
   10.8 Absolute $ Opportunity Assessment by Type 
   10.9 Market Attractiveness Analysis by Type
   10.10 Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Applications
      10.10.1 Consumer Electronics
      10.10.2 Inverter & UPS
      10.10.3 Electric Vehicle
      10.10.4 Industrial System
      10.10.5 Others (Medical Devices & Traction)
      10.10.6 Energy & Power
   10.11 Basis Point Share (BPS) Analysis by Applications 
   10.12 Absolute $ Opportunity Assessment by Applications 
   10.13 Market Attractiveness Analysis by Applications

Chapter 11 Asia Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Analysis and Forecast
   11.1 Introduction
   11.2 Asia Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Country
      11.2.1 China
      11.2.2 Japan
      11.2.3 South Korea
      11.2.4 India
      11.2.5 Australia
      11.2.6 South East Asia (SEA)
      11.2.7 Rest of Asia Pacific (APAC)
   11.3 Basis Point Share (BPS) Analysis by Country
   11.4 Absolute $ Opportunity Assessment by Country
   11.5 Market Attractiveness Analysis by Country
   11.6 Asia Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Type
      11.6.1 High Voltage
      11.6.2 Medium Voltage
      11.6.3 Low Voltage
   11.7 Basis Point Share (BPS) Analysis by Type 
   11.8 Absolute $ Opportunity Assessment by Type 
   11.9 Market Attractiveness Analysis by Type
   11.10 Asia Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Applications
      11.10.1 Consumer Electronics
      11.10.2 Inverter & UPS
      11.10.3 Electric Vehicle
      11.10.4 Industrial System
      11.10.5 Others (Medical Devices & Traction)
      11.10.6 Energy & Power
   11.11 Basis Point Share (BPS) Analysis by Applications 
   11.12 Absolute $ Opportunity Assessment by Applications 
   11.13 Market Attractiveness Analysis by Applications

Chapter 12 Latin America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Analysis and Forecast
   12.1 Introduction
   12.2 Latin America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Country
      12.2.1 Brazil
      12.2.2 Mexico
      12.2.3 Rest of Latin America (LATAM)
   12.3 Basis Point Share (BPS) Analysis by Country
   12.4 Absolute $ Opportunity Assessment by Country
   12.5 Market Attractiveness Analysis by Country
   12.6 Latin America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Type
      12.6.1 High Voltage
      12.6.2 Medium Voltage
      12.6.3 Low Voltage
   12.7 Basis Point Share (BPS) Analysis by Type 
   12.8 Absolute $ Opportunity Assessment by Type 
   12.9 Market Attractiveness Analysis by Type
   12.10 Latin America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Applications
      12.10.1 Consumer Electronics
      12.10.2 Inverter & UPS
      12.10.3 Electric Vehicle
      12.10.4 Industrial System
      12.10.5 Others (Medical Devices & Traction)
      12.10.6 Energy & Power
   12.11 Basis Point Share (BPS) Analysis by Applications 
   12.12 Absolute $ Opportunity Assessment by Applications 
   12.13 Market Attractiveness Analysis by Applications

Chapter 13 Middle East & Africa (MEA) Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Analysis and Forecast
   13.1 Introduction
   13.2 Middle East & Africa (MEA) Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Country
      13.2.1 Saudi Arabia
      13.2.2 South Africa
      13.2.3 UAE
      13.2.4 Rest of Middle East & Africa (MEA)
   13.3 Basis Point Share (BPS) Analysis by Country
   13.4 Absolute $ Opportunity Assessment by Country
   13.5 Market Attractiveness Analysis by Country
   13.6 Middle East & Africa (MEA) Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Type
      13.6.1 High Voltage
      13.6.2 Medium Voltage
      13.6.3 Low Voltage
   13.7 Basis Point Share (BPS) Analysis by Type 
   13.8 Absolute $ Opportunity Assessment by Type 
   13.9 Market Attractiveness Analysis by Type
   13.10 Middle East & Africa (MEA) Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Size Forecast by Applications
      13.10.1 Consumer Electronics
      13.10.2 Inverter & UPS
      13.10.3 Electric Vehicle
      13.10.4 Industrial System
      13.10.5 Others (Medical Devices & Traction)
      13.10.6 Energy & Power
   13.11 Basis Point Share (BPS) Analysis by Applications 
   13.12 Absolute $ Opportunity Assessment by Applications 
   13.13 Market Attractiveness Analysis by Applications

Chapter 14 Competition Landscape 
   14.1 Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market: Competitive Dashboard
   14.2 Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market: Market Share Analysis, 2019
   14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy) 
      14.3.1 Fairchild Semiconductor International Inc
      14.3.2 STMicroelectronics
      14.3.3 ABB Ltd
      14.3.4 Hitachi Power Semiconductor Device Ltd
      14.3.5 Toshiba Corporation
      14.3.6 Mitsubishi Electric Corporation
      14.3.7 Infineon Technologies AG

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