Market Overview:
The global Magneto Resistive RAM (MRAM) market is expected to grow at a CAGR of over 20% during the forecast period from 2018 to 2030. The growth in the MRAM market can be attributed to the increasing demand for non-volatile memory solutions across various applications. Toggle MRAM and STT-MRAM are the two major types of MRAMs available in the market. Toggle MRAM is expected to account for a larger share of the global MRAM market, owing to its advantages such as high speed, low power consumption, and better scalability as compared to STT-MRAM. The automotive sector is expected to be one of the key application areas for toggle MRAMS, due to its ability to provide high reliability and fast data access speeds required by advanced driver assistance systems (ADAS) and autonomous vehicles. North America is estimatedto hold a leading position in terms of revenue contribution in 2018 followed by Europeand Asia Pacific .
Product Definition:
Magneto resistive RAM (MRAM) is a type of non-volatile random access memory that uses the magnetic properties of materials to store data. MRAM retains its information even when power is turned off, making it an ideal choice for applications that require high-speed data retrieval and low power consumption such as mobile devices and embedded systems.
Toggle MRAM:
Toggle MRAM, also known as One-Transistor Magneto-Resistive RAM (TMMR), is a new nonvolatile memory type that was introduced by Samsung in February 2016. It utilizes a single transistor to store data instead of the conventional two transistors used in flash memory.
STT-MRAM:
Magneto Resistive RAM (MRAM) is a new type of non-volatile memory that uses the principle of magnetic storage. It was initially developed for computer applications, but its high speed and density have made it applicable in various other sectors as well. MRAM makes use of an electric current to change the state of a magnetic domain within a resistive material, hence the name magneto resistive RAM.
Application Insights:
The enterprise storage application segment led the global magneto resistive RAM market in 2017. The growth can be attributed to the increasing demand from cloud-based applications and data centers. Enterprise storage includes both hard disk drives (HDD) and solid-state drives (SSD). Increasing demand for NAND flash memory has resulted in increased use of MRAM as an alternative to conventional flash memory.
Enterprise storage is expected to witness significant growth over the forecast period owing to its non- volatile nature, which makes it a preferred option over other forms of electronic data stores such as NOR or DRAM. Magnetoresistive random access memory offers high endurance, low power consumption, higher capacity, and better performance than other forms of electronic data stores such as static random access memories or dynamic Random Access Memory (DRAM).
Regional Analysis:
North America is expected to be the key regional market over the forecast period owing to technological advancements and high demand for advanced storage devices. The presence of major technology players in this region is also likely to boost growth. Asia Pacific is anticipated to witness significant growth due to increasing demand from emerging economies such as China, Japan, and India. Growing investments by governments in order for their countries’ advancement in magnetoresistive random access memory (MRAM) technologies are also driving regional growth.
Growth Factors:
- Increasing demand for high-performance and low-power consuming memory solutions
- Growing popularity of MRAM in automotive and industrial applications
- Rising demand from data centers for storage solutions with fast access time and high endurance
- Proliferation of next-generation devices that require more efficient memory management
- Growing number of collaborations between MRAM suppliers and semiconductor companies
Scope Of The Report
Report Attributes
Report Details
Report Title
Magneto Resistive RAM Market Research Report
By Type
Toggle MRAM, STT-MRAM
By Application
Consumer Electronics, Robotics, Automotive, Enterprise Storage, Aerospace & Defense, Others
By Companies
Everspin Technologies, NVE Corporation, Honeywell International, Avalanche Technology, Toshiba, Spin Transfer Technologies, Samsung Electronics, TSMC, Everspin Technologies
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
240
Number of Tables & Figures
168
Customization Available
Yes, the report can be customized as per your need.
Global Magneto Resistive RAM Market Report Segments:
The global Magneto Resistive RAM market is segmented on the basis of:
Types
Toggle MRAM, STT-MRAM
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Consumer Electronics, Robotics, Automotive, Enterprise Storage, Aerospace & Defense, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Everspin Technologies
- NVE Corporation
- Honeywell International
- Avalanche Technology
- Toshiba
- Spin Transfer Technologies
- Samsung Electronics
- TSMC
- Everspin Technologies
Highlights of The Magneto Resistive RAM Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- Toggle MRAM
- STT-MRAM
- By Application:
- Consumer Electronics
- Robotics
- Automotive
- Enterprise Storage
- Aerospace & Defense
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Magneto Resistive RAM Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
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8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
Magneto Resistive RAM (MRAM) is a type of non-volatile memory that uses the principles of magnetism to store data. MRAM can be faster and more reliable than traditional DRAM, making it an attractive option for high-performance applications.
Some of the major players in the magneto resistive ram market are Everspin Technologies, NVE Corporation, Honeywell International, Avalanche Technology, Toshiba, Spin Transfer Technologies, Samsung Electronics, TSMC, Everspin Technologies.
The magneto resistive ram market is expected to grow at a compound annual growth rate of 20%.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Magneto Resistive RAM Market Overview 4.1 Introduction 4.1.1 Market Taxonomy 4.1.2 Market Definition 4.1.3 Macro-Economic Factors Impacting the Market Growth 4.2 Magneto Resistive RAM Market Dynamics 4.2.1 Market Drivers 4.2.2 Market Restraints 4.2.3 Market Opportunity 4.3 Magneto Resistive RAM Market - Supply Chain Analysis 4.3.1 List of Key Suppliers 4.3.2 List of Key Distributors 4.3.3 List of Key Consumers 4.4 Key Forces Shaping the Magneto Resistive RAM Market 4.4.1 Bargaining Power of Suppliers 4.4.2 Bargaining Power of Buyers 4.4.3 Threat of Substitution 4.4.4 Threat of New Entrants 4.4.5 Competitive Rivalry 4.5 Global Magneto Resistive RAM Market Size & Forecast, 2020-2028 4.5.1 Magneto Resistive RAM Market Size and Y-o-Y Growth 4.5.2 Magneto Resistive RAM Market Absolute $ Opportunity
Chapter 5 Global Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Market Size Forecast by Type
5.2.1 Toggle MRAM
5.2.2 STT-MRAM
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Market Size Forecast by Applications
6.2.1 Consumer Electronics
6.2.2 Robotics
6.2.3 Automotive
6.2.4 Enterprise Storage
6.2.5 Aerospace & Defense
6.2.6 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Magneto Resistive RAM Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Magneto Resistive RAM Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Analysis and Forecast
9.1 Introduction
9.2 North America Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Market Size Forecast by Type
9.6.1 Toggle MRAM
9.6.2 STT-MRAM
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Market Size Forecast by Applications
9.10.1 Consumer Electronics
9.10.2 Robotics
9.10.3 Automotive
9.10.4 Enterprise Storage
9.10.5 Aerospace & Defense
9.10.6 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Analysis and Forecast
10.1 Introduction
10.2 Europe Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Market Size Forecast by Type
10.6.1 Toggle MRAM
10.6.2 STT-MRAM
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Market Size Forecast by Applications
10.10.1 Consumer Electronics
10.10.2 Robotics
10.10.3 Automotive
10.10.4 Enterprise Storage
10.10.5 Aerospace & Defense
10.10.6 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Market Size Forecast by Type
11.6.1 Toggle MRAM
11.6.2 STT-MRAM
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Market Size Forecast by Applications
11.10.1 Consumer Electronics
11.10.2 Robotics
11.10.3 Automotive
11.10.4 Enterprise Storage
11.10.5 Aerospace & Defense
11.10.6 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Analysis and Forecast
12.1 Introduction
12.2 Latin America Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Market Size Forecast by Type
12.6.1 Toggle MRAM
12.6.2 STT-MRAM
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Market Size Forecast by Applications
12.10.1 Consumer Electronics
12.10.2 Robotics
12.10.3 Automotive
12.10.4 Enterprise Storage
12.10.5 Aerospace & Defense
12.10.6 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Market Size Forecast by Type
13.6.1 Toggle MRAM
13.6.2 STT-MRAM
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Market Size Forecast by Applications
13.10.1 Consumer Electronics
13.10.2 Robotics
13.10.3 Automotive
13.10.4 Enterprise Storage
13.10.5 Aerospace & Defense
13.10.6 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Magneto Resistive RAM Market: Competitive Dashboard
14.2 Global Magneto Resistive RAM Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Everspin Technologies
14.3.2 NVE Corporation
14.3.3 Honeywell International
14.3.4 Avalanche Technology
14.3.5 Toshiba
14.3.6 Spin Transfer Technologies
14.3.7 Samsung Electronics
14.3.8 TSMC
14.3.9 Everspin Technologies