Market Overview:
The global silicon carbide discrete devices market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The market growth can be attributed to the increasing demand for silicon carbide-based products in various applications, such as lighting control, industrial motor drive, flame detector, EV motor drive, EV charging and electronic combat system. In addition, the growing demand for renewable energy sources is also contributing to the growth of this market. However, high manufacturing costs and limited supply are some of the major factors restraining the growth of this market. Based on type, SiC MOSFET accounted for a major share of the global silicon carbide discrete devices market in 2017. This segment is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. SiC diodes are also witnessing high demand due their superior performance over traditional silicon-based diodes in terms of switching speed and power handling capacity.
Product Definition:
A silicon carbide discrete device is a semiconductor device that is made of silicon carbide. Silicon carbide has many advantages over other materials, including higher thermal conductivity, higher electron mobility, and lower junction leakage. This makes silicon carbide an excellent choice for high-performance semiconductor devices.
SiC MOSFET:
Silicon Carbide MOSFET is a type of semiconductor with p-n junction, which controls the current flow in an electric circuit. Silicon carbide has many characteristics similar to silicon such as high electrical and thermal conductivity, low bandgap energy source (1.5 eV), high on-state resistance (10M) and low off-state resistance (100K).
SiC Diode:
Silicon Carbide (SiC) discrete devices market is expected to witness significant growth over the forecast period owing to its high switching frequency and low power consumption as compared to silicon nitride. Silicon carbide diodes are made of crystalline silicon along with carbon, which provides them a higher operating temperature as well as greater resistance towards electric fields.
Application Insights:
The lighting control application segment led the global silicon carbide discrete devices market in 2017 and is projected to witness significant growth over the forecast period. Silicon carbide provides efficient light-emitting diodes (LEDs) that exhibit high color purity, reliability, and efficiency. These LEDs are used for streetlights, traffic signals, building signs and markers, etc., which has resulted in increased demand for SiC discrete devices across the globe.
Industrial motor drive applications include industrial drives such as 3D printers that use a combination of electronic components including MOSFETs and power supplies made from semiconductors such as gallium nitride (GaN) and silicon carbide to achieve higher performance levels than conventional electronic systems. The growing adoption of 3D printing technology across industries including automotive & transportation is expected to increase demand for these products over the coming years.
Regional Analysis:
Asia Pacific is expected to be the fastest-growing region, owing to the presence of key industry participants and large consumer base. The growth in this region is attributed to increasing demand for energy storage devices along with rising renewable energy production. In addition, growing industrialization and technological advancements are also driving the market growth in this region.
The Asia Pacific was followed by Europe which accounted for over 25% of global revenue share in 2017 on account of high penetration rate of Silicon Carbide discrete devices used across various applications including lighting control, motor drive, flame detection system etc. Moreover SiC MOSFETs are being increasingly used as power switches for controlling electric motors due to their advantages such as low voltage drop and high efficiency compared to other conventional semiconductor technologies such as bipolar junction transistors (BJT). This trend will continue over the forecast period thereby driving regional market growth during the forecast period.
Growth Factors:
- Increasing demand for silicon carbide discrete devices from the automotive industry on account of its superior properties such as high thermal conductivity, low thermal expansion coefficient and excellent electrical insulation.
- Rising demand for silicon carbide discrete devices in power electronics applications due to their superior switching performance and high current carrying capacity.
- Growing popularity of silicon carbide discrete devices in LED lighting applications due to their ability to deliver higher brightness levels as well as longer life spans as compared to other semiconductor materials.
- Proliferation of smart technologies and the increasing adoption of IoT across various industrial sectors is expected to drive the demand for silicon carbide discrete devices over the forecast period.
Scope Of The Report
Report Attributes
Report Details
Report Title
Silicon Carbide Discrete Devices Market Research Report
By Type
SiC MOSFET, SiC Diode, SIC Module
By Application
Lighting Control, Industrial Motor Drive, Flame Detector, EV Motor Drive, EV Charging, Electronic Combat System, Wind Energy, Solar Energy, Others
By Companies
Infineon Technologies AG, Cree Inc. (Wolfspeed), Rohm Semiconductor, Stmicroelectronics N.V., Fuji Electric Co., Ltd., On Semiconductor, General Electric, United Silicon Carbide, Inc., Genesic Semiconductor Inc., Renesas Electronics Corporation, Infineon Technologies AG, Ascatron AB, Pilegrowth Tech S.R.L.
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
189
Number of Tables & Figures
133
Customization Available
Yes, the report can be customized as per your need.
Global Silicon Carbide Discrete Devices Market Report Segments:
The global Silicon Carbide Discrete Devices market is segmented on the basis of:
Types
SiC MOSFET, SiC Diode, SIC Module
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Lighting Control, Industrial Motor Drive, Flame Detector, EV Motor Drive, EV Charging, Electronic Combat System, Wind Energy, Solar Energy, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Infineon Technologies AG
- Cree Inc. (Wolfspeed)
- Rohm Semiconductor
- Stmicroelectronics N.V.
- Fuji Electric Co., Ltd.
- On Semiconductor
- General Electric
- United Silicon Carbide, Inc.
- Genesic Semiconductor Inc.
- Renesas Electronics Corporation
- Infineon Technologies AG
- Ascatron AB
- Pilegrowth Tech S.R.L.
Highlights of The Silicon Carbide Discrete Devices Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- SiC MOSFET
- SiC Diode
- SIC Module
- By Application:
- Lighting Control
- Industrial Motor Drive
- Flame Detector
- EV Motor Drive
- EV Charging
- Electronic Combat System
- Wind Energy
- Solar Energy
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Silicon Carbide Discrete Devices Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
Silicon Carbide Discrete Devices are electronic components that use silicon carbide as the semiconductor material. Silicon Carbide Discrete Devices are used in a wide range of applications, including telecommunications, computing, and energy storage.
Some of the key players operating in the silicon carbide discrete devices market are Infineon Technologies AG, Cree Inc. (Wolfspeed), Rohm Semiconductor, Stmicroelectronics N.V., Fuji Electric Co., Ltd., On Semiconductor, General Electric, United Silicon Carbide, Inc., Genesic Semiconductor Inc., Renesas Electronics Corporation, Infineon Technologies AG, Ascatron AB, Pilegrowth Tech S.R.L..
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Silicon Carbide Discrete Devices Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 Silicon Carbide Discrete Devices Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 Silicon Carbide Discrete Devices Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the Silicon Carbide Discrete Devices Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global Silicon Carbide Discrete Devices Market Size & Forecast, 2020-2028
4.5.1 Silicon Carbide Discrete Devices Market Size and Y-o-Y Growth
4.5.2 Silicon Carbide Discrete Devices Market Absolute $ Opportunity
Chapter 5 Global Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Market Size Forecast by Type
5.2.1 SiC MOSFET
5.2.2 SiC Diode
5.2.3 SIC Module
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Market Size Forecast by Applications
6.2.1 Lighting Control
6.2.2 Industrial Motor Drive
6.2.3 Flame Detector
6.2.4 EV Motor Drive
6.2.5 EV Charging
6.2.6 Electronic Combat System
6.2.7 Wind Energy
6.2.8 Solar Energy
6.2.9 Others
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Silicon Carbide Discrete Devices Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Silicon Carbide Discrete Devices Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Analysis and Forecast
9.1 Introduction
9.2 North America Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Market Size Forecast by Type
9.6.1 SiC MOSFET
9.6.2 SiC Diode
9.6.3 SIC Module
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Market Size Forecast by Applications
9.10.1 Lighting Control
9.10.2 Industrial Motor Drive
9.10.3 Flame Detector
9.10.4 EV Motor Drive
9.10.5 EV Charging
9.10.6 Electronic Combat System
9.10.7 Wind Energy
9.10.8 Solar Energy
9.10.9 Others
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Analysis and Forecast
10.1 Introduction
10.2 Europe Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Market Size Forecast by Type
10.6.1 SiC MOSFET
10.6.2 SiC Diode
10.6.3 SIC Module
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Market Size Forecast by Applications
10.10.1 Lighting Control
10.10.2 Industrial Motor Drive
10.10.3 Flame Detector
10.10.4 EV Motor Drive
10.10.5 EV Charging
10.10.6 Electronic Combat System
10.10.7 Wind Energy
10.10.8 Solar Energy
10.10.9 Others
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Market Size Forecast by Type
11.6.1 SiC MOSFET
11.6.2 SiC Diode
11.6.3 SIC Module
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Market Size Forecast by Applications
11.10.1 Lighting Control
11.10.2 Industrial Motor Drive
11.10.3 Flame Detector
11.10.4 EV Motor Drive
11.10.5 EV Charging
11.10.6 Electronic Combat System
11.10.7 Wind Energy
11.10.8 Solar Energy
11.10.9 Others
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Analysis and Forecast
12.1 Introduction
12.2 Latin America Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Market Size Forecast by Type
12.6.1 SiC MOSFET
12.6.2 SiC Diode
12.6.3 SIC Module
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Market Size Forecast by Applications
12.10.1 Lighting Control
12.10.2 Industrial Motor Drive
12.10.3 Flame Detector
12.10.4 EV Motor Drive
12.10.5 EV Charging
12.10.6 Electronic Combat System
12.10.7 Wind Energy
12.10.8 Solar Energy
12.10.9 Others
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Market Size Forecast by Type
13.6.1 SiC MOSFET
13.6.2 SiC Diode
13.6.3 SIC Module
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Market Size Forecast by Applications
13.10.1 Lighting Control
13.10.2 Industrial Motor Drive
13.10.3 Flame Detector
13.10.4 EV Motor Drive
13.10.5 EV Charging
13.10.6 Electronic Combat System
13.10.7 Wind Energy
13.10.8 Solar Energy
13.10.9 Others
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Silicon Carbide Discrete Devices Market: Competitive Dashboard
14.2 Global Silicon Carbide Discrete Devices Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Infineon Technologies AG
14.3.2 Cree Inc. (Wolfspeed)
14.3.3 Rohm Semiconductor
14.3.4 Stmicroelectronics N.V.
14.3.5 Fuji Electric Co., Ltd.
14.3.6 On Semiconductor
14.3.7 General Electric
14.3.8 United Silicon Carbide, Inc.
14.3.9 Genesic Semiconductor Inc.
14.3.10 Renesas Electronics Corporation
14.3.11 Infineon Technologies AG
14.3.12 Ascatron AB
14.3.13 Pilegrowth Tech S.R.L.
