Market Overview:
The global silicon carbide epitaxial wafer market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The market growth can be attributed to the increasing demand for high voltage SiC devices in various applications such as power electronics, electric vehicles, and renewable energy. In addition, the growing demand for semiconductor devices across different end-use industries is also contributing to the growth of the global silicon carbide epitaxial wafer market. Based on type, the global silicon carbide epitaxial wafer market can be segmented into 100mm, 150mm, and 200mm segments. Among these segments, 200mm segment is expected to witness highest growth during the forecast period owing to increasing demand for high voltage SiC devices in various applications. Based on application, 600-1200V SiC Devices segment is estimated to account for major share of revenue in 2018 and is projected grow at a CAGR of XX% during forecast period from 2018-2030.
Product Definition:
A Silicon Carbide Epitaxial Wafer is a semiconductor wafer made of silicon carbide (SiC), a compound of silicon and carbon. Silicon carbide has many desirable properties, including high thermal conductivity, low electrical resistance, and high hardness. These properties make it an excellent material for making semiconductor devices.
100mm:
Silicon carbide epitaxial wafers are thin layers of silicon and carbon, grown on a single crystal of pure silicon. The product finds application in the semiconductor industry owing to its properties such as low thermal expansion, high electrical conductivity and heat tolerance. It is also used in optoelectronics due to its ability to confine light within narrow boundaries which enhances the performance of LED drivers by improving uniformity and brightness.
150mm:
150mm is the size of a single crystal silicon wafer. It is also known as Single Crystal Wafer (SCW) or Silicon Carbide Epitaxial Wafer (SCEW). The 150mm diameter SCEW was developed by CMR International and Sino-American Joint Venture in the early 1970s.
Application Insights:
The 600-1200V SiC devices segment accounted for the largest revenue share in 2015 and is projected to witness significant growth over the forecast period. The 1200V SiC devices are used in power distribution applications as they exhibit low self-heating property. These products are also used in high voltage switchgear and transmission line applications. The 600 VDC - 1200VDC range of products is witnessing increased demand from various industries including automotive & transportation, oil & gas and healthcare owing to their properties such as high dielectric strength, thermal stability and low self-heating rate which make them suitable for use at high voltage levels across a wide temperature range.
Regional Analysis:
Asia Pacific region dominated the global market in 2017 and is expected to continue its dominance over the forecast period. The growth of this region can be attributed to rising demand for high-power density 600V-1200V SiC devices from various applications such as aerospace, defense, automotive, etc. In addition, increasing investments by key players in developing countries such as China and India are anticipated to boost regional growth over the next eight years.
The Latin American market is also estimated to witness significant growth due to technological advancements coupled with increased focus on energy conservation across several countries including Brazil and Mexico among others. Moreover, growing demand for electronic devices owing to rapid urbanization along with supportive government policies aimed at reducing carbon footprints is projected favorably impact industry dynamics over the coming years.
Growth Factors:
- Increasing demand from the semiconductor and electronics industries for silicon carbide epitaxial wafers with superior performance characteristics is expected to drive the market growth.
- Growing demand for LED lighting is also anticipated to boost the market growth as silicon carbide epitaxial wafers are extensively used in LED manufacturing.
- Rising investments in nanotechnology and optoelectronics sectors are also expected to fuel the demand for silicon carbide epitaxial wafers over the forecast period.
- Proliferation of 3D printing technology is anticipated to create new opportunities for market players operating in this space.
Scope Of The Report
Report Attributes
Report Details
Report Title
Silicon Carbide Epitaxial Wafer Market Research Report
By Type
100mm, 150mm, 200mm
By Application
600-1200V SiC Devices, 1200-3300V SiC Devices, Above 3300V SiC Devices
By Companies
Cree (Wolfspeed), II-VI Advanced Materials(Ascatron), Showa Denko K.K.(NSSMC), Epiworld intenational, SK Siltron(Dupont), TYSiC, STMicroelectronics (Norstel), ROHM (Sicrystal)
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
225
Number of Tables & Figures
158
Customization Available
Yes, the report can be customized as per your need.
Global Silicon Carbide Epitaxial Wafer Market Report Segments:
The global Silicon Carbide Epitaxial Wafer market is segmented on the basis of:
Types
100mm, 150mm, 200mm
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
600-1200V SiC Devices, 1200-3300V SiC Devices, Above 3300V SiC Devices
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Cree (Wolfspeed)
- II-VI Advanced Materials(Ascatron)
- Showa Denko K.K.(NSSMC)
- Epiworld intenational
- SK Siltron(Dupont)
- TYSiC
- STMicroelectronics (Norstel)
- ROHM (Sicrystal)
Highlights of The Silicon Carbide Epitaxial Wafer Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- 100mm
- 150mm
- 200mm
- By Application:
- 600-1200V SiC Devices
- 1200-3300V SiC Devices
- Above 3300V SiC Devices
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Silicon Carbide Epitaxial Wafer Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
A silicon carbide epitaxial wafer is a semiconductor device made from a single crystal of silicon carbide. Silicon carbide epitaxial wafers are used in electronic and optical applications because they have very high electrical and thermal conductivity, making them ideal for heat-sensitive components.
Some of the major companies in the silicon carbide epitaxial wafer market are Cree (Wolfspeed), II-VI Advanced Materials(Ascatron), Showa Denko K.K.(NSSMC), Epiworld intenational, SK Siltron(Dupont), TYSiC, STMicroelectronics (Norstel), ROHM (Sicrystal).
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Silicon Carbide Epitaxial Wafer Market Overview
4.1 Introduction
4.1.1 Market Taxonomy
4.1.2 Market Definition
4.1.3 Macro-Economic Factors Impacting the Market Growth
4.2 Silicon Carbide Epitaxial Wafer Market Dynamics
4.2.1 Market Drivers
4.2.2 Market Restraints
4.2.3 Market Opportunity
4.3 Silicon Carbide Epitaxial Wafer Market - Supply Chain Analysis
4.3.1 List of Key Suppliers
4.3.2 List of Key Distributors
4.3.3 List of Key Consumers
4.4 Key Forces Shaping the Silicon Carbide Epitaxial Wafer Market
4.4.1 Bargaining Power of Suppliers
4.4.2 Bargaining Power of Buyers
4.4.3 Threat of Substitution
4.4.4 Threat of New Entrants
4.4.5 Competitive Rivalry
4.5 Global Silicon Carbide Epitaxial Wafer Market Size & Forecast, 2020-2028
4.5.1 Silicon Carbide Epitaxial Wafer Market Size and Y-o-Y Growth
4.5.2 Silicon Carbide Epitaxial Wafer Market Absolute $ Opportunity
Chapter 5 Global Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Market Size Forecast by Type
5.2.1 100mm
5.2.2 150mm
5.2.3 200mm
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Market Size Forecast by Applications
6.2.1 600-1200V SiC Devices
6.2.2 1200-3300V SiC Devices
6.2.3 Above 3300V SiC Devices
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Silicon Carbide Epitaxial Wafer Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Silicon Carbide Epitaxial Wafer Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Analysis and Forecast
9.1 Introduction
9.2 North America Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Market Size Forecast by Type
9.6.1 100mm
9.6.2 150mm
9.6.3 200mm
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Market Size Forecast by Applications
9.10.1 600-1200V SiC Devices
9.10.2 1200-3300V SiC Devices
9.10.3 Above 3300V SiC Devices
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Analysis and Forecast
10.1 Introduction
10.2 Europe Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Market Size Forecast by Type
10.6.1 100mm
10.6.2 150mm
10.6.3 200mm
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Market Size Forecast by Applications
10.10.1 600-1200V SiC Devices
10.10.2 1200-3300V SiC Devices
10.10.3 Above 3300V SiC Devices
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Market Size Forecast by Type
11.6.1 100mm
11.6.2 150mm
11.6.3 200mm
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Market Size Forecast by Applications
11.10.1 600-1200V SiC Devices
11.10.2 1200-3300V SiC Devices
11.10.3 Above 3300V SiC Devices
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Analysis and Forecast
12.1 Introduction
12.2 Latin America Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Market Size Forecast by Type
12.6.1 100mm
12.6.2 150mm
12.6.3 200mm
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Market Size Forecast by Applications
12.10.1 600-1200V SiC Devices
12.10.2 1200-3300V SiC Devices
12.10.3 Above 3300V SiC Devices
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Market Size Forecast by Type
13.6.1 100mm
13.6.2 150mm
13.6.3 200mm
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Market Size Forecast by Applications
13.10.1 600-1200V SiC Devices
13.10.2 1200-3300V SiC Devices
13.10.3 Above 3300V SiC Devices
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Silicon Carbide Epitaxial Wafer Market: Competitive Dashboard
14.2 Global Silicon Carbide Epitaxial Wafer Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Cree (Wolfspeed)
14.3.2 II-VI Advanced Materials(Ascatron)
14.3.3 Showa Denko K.K.(NSSMC)
14.3.4 Epiworld intenational
14.3.5 SK Siltron(Dupont)
14.3.6 TYSiC
14.3.7 STMicroelectronics (Norstel)
14.3.8 ROHM (Sicrystal)
