Market Overview:
The global silicon carbide (SiC) power devices market is expected to grow at a CAGR of XX% during the forecast period from 2018 to 2030. The market growth can be attributed to the increasing demand for SiC power devices in various applications such as electric vehicles/hybrid electric vehicles (EVs/HEVs), photovoltaic inverters, uninterruptible power supplies (UPS) and point-of-sale systems. Additionally, the growing demand for energy-efficient and high-power electronics is also propelling the growth of the global silicon carbide (SiC) power devices market. Based on type, the global silicon carbide (SiC) power devices market can be segmented into diodes, modules, transistors and other types. The diode segment is expected to account for a major share of the global silicon carbide (SiC) power devices market during the forecast period owing to its high efficiency and low cost. Based on application, EVs/HEVs are anticipated to be one of the key drivers of growth for this market during 2018–2030. This can be attributed to rising concerns over environmental pollution caused by traditional internal combustion engines in automobiles.
Product Definition:
A silicon carbide power device is a type of semiconductor device that uses silicon carbide as the active material. Silicon carbide has several advantages over other materials used in power devices, including higher breakdown voltage, higher thermal conductivity, and higher resistance to thermal runaway. These advantages make silicon carbide an attractive choice for use in high-power applications such as electric vehicles and data centers.
Diodes:
Diodes are electronic components that act as one-way valves for electric current. Diodes can be classified into two main categories, silicon diodes and germanium diodes. Silicon diodes have a maximum operating temperature of 300°C whereas germanium diodes have an operating range from 100 to 250°C.
Modules:
Modules are SiC power devices that are used to generate high voltage and current needed by the silicon carbide power device. The Silicon Carbide Power Devices market is expected to witness significant growth over the forecast period owing to growing demand for electronic equipment such as smartphones, laptops, and other consumer electronics products.
The modules form a major portion of SiC semiconductors in electronic devices; they provide electrical insulation, mechanical support (for example: bonding),.
Application Insights:
The demand for silicon carbide power devices in various applications including electric vehicles, heavy-duty electric vehicles (HEVs), photovoltaic inverters, uninterruptible power supply and personal computers is projected to witness significant growth over the forecast period. HEVs accounted for a major share of the global market revenue in 2017 owing to increasing sales of passenger cars and light commercial vehicles across several countries worldwide. Silicon carbide modules are used as an active material in batteries that are used in hybrid and full EVs. The growing adoption of hybrid cars is expected to augment the product demand over the forecast period.
SiC transistors are being considered as an alternative option for high-power amplifiers due to their low operating temperature which makes them suitable for use with solar cells or wind turbines generating clean energy.
Regional Analysis:
Asia Pacific region is anticipated to witness significant growth over the forecast period owing to increasing demand for energy storage devices and electric vehicles. The growing PV inverter manufacturing industry in China, Japan, South Korea, Taiwan and India is expected to drive the regional market over the next eight years.
The European region accounted for a major share of global revenue in 2017 due to high penetration of Silicon Carbide power devices in EV/HEV applications across Europe. Moreover, presence of key automobile manufacturers such as BMW Group; Mercedes-Benz AG; Audi AG; Volvo Car Corporation; Volkswagen Group A GmbH & Co., KGaA will propel product adoption across several automotive applications including airbags and traction control units within automobiles.
Growth Factors:
- Increasing demand for SiC power devices from the automotive industry on account of their high efficiency and low thermal resistance
- Rising demand for SiC power devices in renewable energy applications due to their superior performance characteristics as compared to traditional silicon-based power devices
- Growing popularity of SiC-based power modules in data centers and telecommunications infrastructure owing to their high reliability and efficiency
- Proliferation of next-generation technologies such as electric vehicles, 5G networks, and artificial intelligence that are fuelling the growth of the SiC market
- Increasing investments by leading players in R&D activities aimed at developing innovative SiC products
Scope Of The Report
Report Attributes
Report Details
Report Title
Silicon Carbide(SiC) Power Devices Market Research Report
By Type
Diodes, Modules, Transistors, Other
By Application
EV/HEVs, PV Inverters, UPS & PS, Other
By Companies
Infineon Technologies, Cree, Mitsubishi Electric, ON Semiconductor, ROHM Semiconductor, STMicroelectronics, Toshiba, Infineon Technologies
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
167
Number of Tables & Figures
117
Customization Available
Yes, the report can be customized as per your need.
Global Silicon Carbide(SiC) Power Devices Market Report Segments:
The global Silicon Carbide(SiC) Power Devices market is segmented on the basis of:
Types
Diodes, Modules, Transistors, Other
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
EV/HEVs, PV Inverters, UPS & PS, Other
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Infineon Technologies
- Cree
- Mitsubishi Electric
- ON Semiconductor
- ROHM Semiconductor
- STMicroelectronics
- Toshiba
- Infineon Technologies
Highlights of The Silicon Carbide(SiC) Power Devices Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- Diodes
- Modules
- Transistors
- Other
- By Application:
- EV/HEVs
- PV Inverters
- UPS & PS
- Other
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Silicon Carbide(SiC) Power Devices Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
Silicon Carbide(SiC) power devices are a type of energy storage device that uses the principles of semiconductor physics to store and release energy. SiC power devices can be used to generate electricity from heat, or vice versa.
Some of the major players in the silicon carbide(sic) power devices market are Infineon Technologies, Cree, Mitsubishi Electric, ON Semiconductor, ROHM Semiconductor, STMicroelectronics, Toshiba, Infineon Technologies.
Chapter 1 Executive Summary
Chapter 2 Assumptions and Acronyms Used
Chapter 3 Research Methodology
Chapter 4 Silicon Carbide(SiC) Power Devices Market Overview 4.1 Introduction 4.1.1 Market Taxonomy 4.1.2 Market Definition 4.1.3 Macro-Economic Factors Impacting the Market Growth 4.2 Silicon Carbide(SiC) Power Devices Market Dynamics 4.2.1 Market Drivers 4.2.2 Market Restraints 4.2.3 Market Opportunity 4.3 Silicon Carbide(SiC) Power Devices Market - Supply Chain Analysis 4.3.1 List of Key Suppliers 4.3.2 List of Key Distributors 4.3.3 List of Key Consumers 4.4 Key Forces Shaping the Silicon Carbide(SiC) Power Devices Market 4.4.1 Bargaining Power of Suppliers 4.4.2 Bargaining Power of Buyers 4.4.3 Threat of Substitution 4.4.4 Threat of New Entrants 4.4.5 Competitive Rivalry 4.5 Global Silicon Carbide(SiC) Power Devices Market Size & Forecast, 2020-2028 4.5.1 Silicon Carbide(SiC) Power Devices Market Size and Y-o-Y Growth 4.5.2 Silicon Carbide(SiC) Power Devices Market Absolute $ Opportunity
Chapter 5 Global Market Analysis and Forecast by Type
5.1 Introduction
5.1.1 Key Market Trends & Growth Opportunities by Type
5.1.2 Basis Point Share (BPS) Analysis by Type
5.1.3 Absolute $ Opportunity Assessment by Type
5.2 Market Size Forecast by Type
5.2.1 Diodes
5.2.2 Modules
5.2.3 Transistors
5.2.4 Other
5.3 Market Attractiveness Analysis by Type
Chapter 6 Global Market Analysis and Forecast by Applications
6.1 Introduction
6.1.1 Key Market Trends & Growth Opportunities by Applications
6.1.2 Basis Point Share (BPS) Analysis by Applications
6.1.3 Absolute $ Opportunity Assessment by Applications
6.2 Market Size Forecast by Applications
6.2.1 EV/HEVs
6.2.2 PV Inverters
6.2.3 UPS & PS
6.2.4 Other
6.3 Market Attractiveness Analysis by Applications
Chapter 7 Global Silicon Carbide(SiC) Power Devices Market Analysis and Forecast by Region
7.1 Introduction
7.1.1 Key Market Trends & Growth Opportunities by Region
7.1.2 Basis Point Share (BPS) Analysis by Region
7.1.3 Absolute $ Opportunity Assessment by Region
7.2 Silicon Carbide(SiC) Power Devices Market Size Forecast by Region
7.2.1 North America
7.2.2 Europe
7.2.3 Asia Pacific
7.2.4 Latin America
7.2.5 Middle East & Africa (MEA)
7.3 Market Attractiveness Analysis by Region
Chapter 8 Coronavirus Disease (COVID-19) Impact
8.1 Introduction
8.2 Current & Future Impact Analysis
8.3 Economic Impact Analysis
8.4 Government Policies
8.5 Investment Scenario
Chapter 9 North America Analysis and Forecast
9.1 Introduction
9.2 North America Market Size Forecast by Country
9.2.1 U.S.
9.2.2 Canada
9.3 Basis Point Share (BPS) Analysis by Country
9.4 Absolute $ Opportunity Assessment by Country
9.5 Market Attractiveness Analysis by Country
9.6 North America Market Size Forecast by Type
9.6.1 Diodes
9.6.2 Modules
9.6.3 Transistors
9.6.4 Other
9.7 Basis Point Share (BPS) Analysis by Type
9.8 Absolute $ Opportunity Assessment by Type
9.9 Market Attractiveness Analysis by Type
9.10 North America Market Size Forecast by Applications
9.10.1 EV/HEVs
9.10.2 PV Inverters
9.10.3 UPS & PS
9.10.4 Other
9.11 Basis Point Share (BPS) Analysis by Applications
9.12 Absolute $ Opportunity Assessment by Applications
9.13 Market Attractiveness Analysis by Applications
Chapter 10 Europe Analysis and Forecast
10.1 Introduction
10.2 Europe Market Size Forecast by Country
10.2.1 Germany
10.2.2 France
10.2.3 Italy
10.2.4 U.K.
10.2.5 Spain
10.2.6 Russia
10.2.7 Rest of Europe
10.3 Basis Point Share (BPS) Analysis by Country
10.4 Absolute $ Opportunity Assessment by Country
10.5 Market Attractiveness Analysis by Country
10.6 Europe Market Size Forecast by Type
10.6.1 Diodes
10.6.2 Modules
10.6.3 Transistors
10.6.4 Other
10.7 Basis Point Share (BPS) Analysis by Type
10.8 Absolute $ Opportunity Assessment by Type
10.9 Market Attractiveness Analysis by Type
10.10 Europe Market Size Forecast by Applications
10.10.1 EV/HEVs
10.10.2 PV Inverters
10.10.3 UPS & PS
10.10.4 Other
10.11 Basis Point Share (BPS) Analysis by Applications
10.12 Absolute $ Opportunity Assessment by Applications
10.13 Market Attractiveness Analysis by Applications
Chapter 11 Asia Pacific Analysis and Forecast
11.1 Introduction
11.2 Asia Pacific Market Size Forecast by Country
11.2.1 China
11.2.2 Japan
11.2.3 South Korea
11.2.4 India
11.2.5 Australia
11.2.6 South East Asia (SEA)
11.2.7 Rest of Asia Pacific (APAC)
11.3 Basis Point Share (BPS) Analysis by Country
11.4 Absolute $ Opportunity Assessment by Country
11.5 Market Attractiveness Analysis by Country
11.6 Asia Pacific Market Size Forecast by Type
11.6.1 Diodes
11.6.2 Modules
11.6.3 Transistors
11.6.4 Other
11.7 Basis Point Share (BPS) Analysis by Type
11.8 Absolute $ Opportunity Assessment by Type
11.9 Market Attractiveness Analysis by Type
11.10 Asia Pacific Market Size Forecast by Applications
11.10.1 EV/HEVs
11.10.2 PV Inverters
11.10.3 UPS & PS
11.10.4 Other
11.11 Basis Point Share (BPS) Analysis by Applications
11.12 Absolute $ Opportunity Assessment by Applications
11.13 Market Attractiveness Analysis by Applications
Chapter 12 Latin America Analysis and Forecast
12.1 Introduction
12.2 Latin America Market Size Forecast by Country
12.2.1 Brazil
12.2.2 Mexico
12.2.3 Rest of Latin America (LATAM)
12.3 Basis Point Share (BPS) Analysis by Country
12.4 Absolute $ Opportunity Assessment by Country
12.5 Market Attractiveness Analysis by Country
12.6 Latin America Market Size Forecast by Type
12.6.1 Diodes
12.6.2 Modules
12.6.3 Transistors
12.6.4 Other
12.7 Basis Point Share (BPS) Analysis by Type
12.8 Absolute $ Opportunity Assessment by Type
12.9 Market Attractiveness Analysis by Type
12.10 Latin America Market Size Forecast by Applications
12.10.1 EV/HEVs
12.10.2 PV Inverters
12.10.3 UPS & PS
12.10.4 Other
12.11 Basis Point Share (BPS) Analysis by Applications
12.12 Absolute $ Opportunity Assessment by Applications
12.13 Market Attractiveness Analysis by Applications
Chapter 13 Middle East & Africa (MEA) Analysis and Forecast
13.1 Introduction
13.2 Middle East & Africa (MEA) Market Size Forecast by Country
13.2.1 Saudi Arabia
13.2.2 South Africa
13.2.3 UAE
13.2.4 Rest of Middle East & Africa (MEA)
13.3 Basis Point Share (BPS) Analysis by Country
13.4 Absolute $ Opportunity Assessment by Country
13.5 Market Attractiveness Analysis by Country
13.6 Middle East & Africa (MEA) Market Size Forecast by Type
13.6.1 Diodes
13.6.2 Modules
13.6.3 Transistors
13.6.4 Other
13.7 Basis Point Share (BPS) Analysis by Type
13.8 Absolute $ Opportunity Assessment by Type
13.9 Market Attractiveness Analysis by Type
13.10 Middle East & Africa (MEA) Market Size Forecast by Applications
13.10.1 EV/HEVs
13.10.2 PV Inverters
13.10.3 UPS & PS
13.10.4 Other
13.11 Basis Point Share (BPS) Analysis by Applications
13.12 Absolute $ Opportunity Assessment by Applications
13.13 Market Attractiveness Analysis by Applications
Chapter 14 Competition Landscape
14.1 Silicon Carbide(SiC) Power Devices Market: Competitive Dashboard
14.2 Global Silicon Carbide(SiC) Power Devices Market: Market Share Analysis, 2019
14.3 Company Profiles (Details – Overview, Financials, Developments, Strategy)
14.3.1 Infineon Technologies
14.3.2 Cree
14.3.3 Mitsubishi Electric
14.3.4 ON Semiconductor
14.3.5 ROHM Semiconductor
14.3.6 STMicroelectronics
14.3.7 Toshiba
14.3.8 Infineon Technologies