Market Overview:
The global ferroelectric random access memory market is expected to grow at a CAGR of 5.5% during the forecast period from 2018 to 2030. The growth in this market can be attributed to the increasing demand for ferroelectric RAMs from the electronics and aerospace industries. Additionally, the growing demand for miniaturization of electronic devices is also contributing to the growth of this market. However, factors such as high manufacturing costs and limited availability are restraining its growth. Based on type, 16K-type ferroelectric RAMs account for the largest share of this market followed by 32K-type and 64K-type RAMs. By application, electronics accounts for the majority share of this market followed by aerospace applications.
Product Definition:
Ferroelectric Random Access Memory is a type of computer memory that uses ferroelectric materials to store data. Ferroelectric RAM is faster and more reliable than traditional random access memory, making it a good choice for applications that require high performance or reliability.
16K:
16K is a unit of digital information that represents one million seconds. It's equal to 1/16th of an hour, or 16 minutes. The higher the number, the better the quality and performance of memory modules used in computers and other electronic devices such as smartphones.
32K:
32K is a unit of digital information which means that it can store 32000 (usually) distinct values in one particular format. It is used as an addressing mode in Ferroelectric Random Access Memory (FRAM). FRAM works on the principle of switching charges between different electrodes using diodes and transistors. The amount of charge stored depends upon the voltage and current applied to the cell.
Application Insights:
The electronics segment accounted for the largest revenue share in 2016 and is expected to continue its dominance over the forecast period. The growing demand for ferroelectric random access memory chips from various electronic devices such as smartphones, wearable devices, and home appliances is anticipated to drive growth.
The aerospace application segment was valued at USD 391.0 million in 2016 owing to their use in aircraft black box recorders, which ensure data safety during accidents or emergencies. They are also used as non-volatile memory storage device in various commercial aircraft models manufactured by companies including Airbus SE and Boeing Co., Ltd., among others.
Other applications include energy storage systems (ESD) & electric vehicles (EV). The growing demand for renewable energy sources coupled with rising environmental concerns regarding carbon emissions has led major manufacturers such as Siemens AG; ABB Ltd.
Regional Analysis:
The Asia Pacific region dominated the global ferroelectric random access memory market in 2016 and is expected to continue its dominance over the forecast period. The growth can be attributed to increasing demand for non-volatile memory devices from various end-use industries such as electronics, aerospace & defense, automotive, etc. In addition, rising investments by key players in this region are anticipated to drive the regional market growth over the forecast period.
The growing electronics industry in China and India has led to an increased demand for ferroelectric random access memory products from these countries. Furthermore, favorable government initiatives regarding manufacturing of semiconductor chips are also expected to drive product demand during the forecast period. For instance; in 2014 – 2015 Chinese government invested around USD X million on research related with semiconductors which include nanowires and nanotubes as well as spintronics which includes ferroelectrics†(Xiaoming Zhang et al., 2014).
Growth Factors:
- Increasing demand for high-performance and low-power consuming devices
- Growing trend of miniaturization in electronic devices
- Proliferation of portable and wearable electronics
- Rising demand from automotive and industrial sectors
- Emerging applications such as 5G, artificial intelligence, and machine learning
Scope Of The Report
Report Attributes
Report Details
Report Title
Ferroelectric Random Access Memory Market Research Report
By Type
16K, 32K, 64K, Others
By Application
Electronics, Aerospace, Others
By Companies
Cypress Semiconductor Corporations, Texas Instruments, International Business Machines, Toshiba Corporation, Infineon Technologies Inc, LAPIS Semiconductor Co, Fujitsu Ltd
Regions Covered
North America, Europe, APAC, Latin America, MEA
Base Year
2021
Historical Year
2019 to 2020 (Data from 2010 can be provided as per availability)
Forecast Year
2030
Number of Pages
230
Number of Tables & Figures
161
Customization Available
Yes, the report can be customized as per your need.
Global Ferroelectric Random Access Memory Market Report Segments:
The global Ferroelectric Random Access Memory market is segmented on the basis of:
Types
16K, 32K, 64K, Others
The product segment provides information about the market share of each product and the respective CAGR during the forecast period. It lays out information about the product pricing parameters, trends, and profits that provides in-depth insights of the market. Furthermore, it discusses latest product developments & innovation in the market.
Applications
Electronics, Aerospace, Others
The application segment fragments various applications of the product and provides information on the market share and growth rate of each application segment. It discusses the potential future applications of the products and driving and restraining factors of each application segment.
Some of the companies that are profiled in this report are:
- Cypress Semiconductor Corporations
- Texas Instruments
- International Business Machines
- Toshiba Corporation
- Infineon Technologies Inc
- LAPIS Semiconductor Co
- Fujitsu Ltd
Highlights of The Ferroelectric Random Access Memory Market Report:
- The market structure and projections for the coming years.
- Drivers, restraints, opportunities, and current trends of market.
- Historical data and forecast.
- Estimations for the forecast period 2030.
- Developments and trends in the market.
- By Type:
- 16K
- 32K
- 64K
- Others
- By Application:
- Electronics
- Aerospace
- Others
- Market scenario by region, sub-region, and country.
- Market share of the market players, company profiles, product specifications, SWOT analysis, and competitive landscape.
- Analysis regarding upstream raw materials, downstream demand, and current market dynamics.
- Government Policies, Macro & Micro economic factors are also included in the report.
We have studied the Ferroelectric Random Access Memory Market in 360 degrees via. both primary & secondary research methodologies. This helped us in building an understanding of the current market dynamics, supply-demand gap, pricing trends, product preferences, consumer patterns & so on. The findings were further validated through primary research with industry experts & opinion leaders across countries. The data is further compiled & validated through various market estimation & data validation methodologies. Further, we also have our in-house data forecasting model to predict market growth up to 2030.
Regional Analysis
- North America
- Europe
- Asia Pacific
- Middle East & Africa
- Latin America
Note: A country of choice can be added in the report at no extra cost. If more than one country needs to be added, the research quote will vary accordingly.
The geographical analysis part of the report provides information about the product sales in terms of volume and revenue in regions. It lays out potential opportunities for the new entrants, emerging players, and major players in the region. The regional analysis is done after considering the socio-economic factors and government regulations of the countries in the regions.
How you may use our products:
- Correctly Positioning New Products
- Market Entry Strategies
- Business Expansion Strategies
- Consumer Insights
- Understanding Competition Scenario
- Product & Brand Management
- Channel & Customer Management
- Identifying Appropriate Advertising Appeals
8 Reasons to Buy This Report
- Includes a Chapter on the Impact of COVID-19 Pandemic On the Market
- Report Prepared After Conducting Interviews with Industry Experts & Top Designates of the Companies in the Market
- Implemented Robust Methodology to Prepare the Report
- Includes Graphs, Statistics, Flowcharts, and Infographics to Save Time
- Industry Growth Insights Provides 24/5 Assistance Regarding the Doubts in the Report
- Provides Information About the Top-winning Strategies Implemented by Industry Players.
- In-depth Insights On the Market Drivers, Restraints, Opportunities, and Threats
- Customization of the Report Available
Frequently Asked Questions?
Ferroelectric random access memory (FRAM) is a type of non-volatile memory that uses ferromagnetic materials to store data. When the material is switched between its two states, it can store a digital value. FRAM can be used in devices such as hard drives and flash memories.
Some of the major players in the ferroelectric random access memory market are Cypress Semiconductor Corporations, Texas Instruments, International Business Machines, Toshiba Corporation, Infineon Technologies Inc, LAPIS Semiconductor Co, Fujitsu Ltd.
The ferroelectric random access memory market is expected to grow at a compound annual growth rate of 5.5%.
1. Executive Summary
2. Assumptions and Acronyms Used
3. Research Methodology
4. Ferroelectric Random Access Memory Market Overview
4.1. Introduction
4.1.1. Market Taxonomy
4.1.2. Market Definition
4.2. Macro-Economic Factors
4.2.1. Industry Outlook
4.3. Ferroelectric Random Access Memory Market Dynamics
4.3.1. Market Drivers
4.3.2. Market Restraints
4.3.3. Opportunity
4.3.4. Market Trends
4.4. Ferroelectric Random Access Memory Market - Supply Chain
4.5. Global Ferroelectric Random Access Memory Market Forecast
4.5.1. Ferroelectric Random Access Memory Market Size (US$ Mn) and Y-o-Y Growth
4.5.2. Ferroelectric Random Access Memory Market Size (000 Units) and Y-o-Y Growth
4.5.3. Ferroelectric Random Access Memory Market Absolute $ Opportunity
5. Global Ferroelectric Random Access Memory Market Analysis and Forecast by Type
5.1. Market Trends
5.2. Introduction
5.2.1. Basis Point Share (BPS) Analysis by Type
5.2.2. Y-o-Y Growth Projections by Type
5.3. Ferroelectric Random Access Memory Market Size and Volume Forecast by Type
5.3.1. 16K
5.3.2. 32K
5.3.3. 64K
5.3.4. Others
5.4. Absolute $ Opportunity Assessment by Type
5.5. Market Attractiveness/Growth Potential Analysis by Type
6. Global Ferroelectric Random Access Memory Market Analysis and Forecast by Application
6.1. Market Trends
6.2. Introduction
6.2.1. Basis Point Share (BPS) Analysis by Application
6.2.2. Y-o-Y Growth Projections by Application
6.3. Ferroelectric Random Access Memory Market Size and Volume Forecast by Application
6.3.1. Electronics
6.3.2. Aerospace
6.3.3. Others
6.4. Absolute $ Opportunity Assessment by Application
6.5. Market Attractiveness/Growth Potential Analysis by Application
7. Global Ferroelectric Random Access Memory Market Analysis and Forecast by Sales Channel
7.1. Market Trends
7.2. Introduction
7.2.1. Basis Point Share (BPS) Analysis by Sales Channel
7.2.2. Y-o-Y Growth Projections by Sales Channel
7.3. Ferroelectric Random Access Memory Market Size and Volume Forecast by Sales Channel
7.3.1. Manufacturer/Distributor/Service Provider
7.3.2. Aftermarket
7.4. Absolute $ Opportunity Assessment by Sales Channel
7.5. Market Attractiveness/Growth Potential Analysis by Sales Channel
8. Global Ferroelectric Random Access Memory Market Analysis and Forecast by Region
8.1. Market Trends
8.2. Introduction
8.2.1. Basis Point Share (BPS) Analysis by Region
8.2.2. Y-o-Y Growth Projections by Region
8.3. Ferroelectric Random Access Memory Market Size and Volume Forecast by Region
8.3.1. North America
8.3.2. Latin America
8.3.3. Europe
8.3.4. Asia Pacific
8.3.5. Middle East and Africa (MEA)
8.4. Absolute $ Opportunity Assessment by Region
8.5. Market Attractiveness/Growth Potential Analysis by Region
8.6. Global Ferroelectric Random Access Memory Demand Share Forecast, 2019-2026
9. North America Ferroelectric Random Access Memory Market Analysis and Forecast
9.1. Introduction
9.1.1. Basis Point Share (BPS) Analysis by Country
9.1.2. Y-o-Y Growth Projections by Country
9.2. North America Ferroelectric Random Access Memory Market Size and Volume Forecast by Country
9.2.1. U.S.
9.2.2. Canada
9.3. Absolute $ Opportunity Assessment by Country
9.4. North America Ferroelectric Random Access Memory Market Size and Volume Forecast by Application
9.4.1. Electronics
9.4.2. Aerospace
9.4.3. Others
9.5. Basis Point Share (BPS) Analysis by Application
9.6. Y-o-Y Growth Projections by Application
9.7. North America Ferroelectric Random Access Memory Market Size and Volume Forecast by Type
9.7.1. 16K
9.7.2. 32K
9.7.3. 64K
9.7.4. Others
9.8. Basis Point Share (BPS) Analysis by Type
9.9. Y-o-Y Growth Projections by Type
9.10. Market Attractiveness/Growth Potential Analysis
9.10.1. By Country
9.10.2. By Product Type
9.10.3. By Application
9.10.4. By Sales Channel
9.11. North America Ferroelectric Random Access Memory Demand Share Forecast, 2019-2026
10. Latin America Ferroelectric Random Access Memory Market Analysis and Forecast
10.1. Introduction
10.1.1. Basis Point Share (BPS) Analysis by Country
10.1.2. Y-o-Y Growth Projections by Country
10.1.3. Latin America Average Pricing Analysis
10.2. Latin America Ferroelectric Random Access Memory Market Size and Volume Forecast by Country
10.2.1. Brazil
10.2.2. Mexico
10.2.3. Rest of Latin America
10.3. Absolute $ Opportunity Assessment by Country
10.4. Latin America Ferroelectric Random Access Memory Market Size and Volume Forecast by Application
10.4.1. Electronics
10.4.2. Aerospace
10.4.3. Others
10.5. Basis Point Share (BPS) Analysis by Application
10.6. Y-o-Y Growth Projections by Application
10.7. Latin America Ferroelectric Random Access Memory Market Size and Volume Forecast by Type
10.7.1. 16K
10.7.2. 32K
10.7.3. 64K
10.7.4. Others
10.8. Basis Point Share (BPS) Analysis by Type
10.9. Y-o-Y Growth Projections by Type
10.10. Market Attractiveness/Growth Potential Analysis
10.10.1. By Country
10.10.2. By Product Type
10.10.3. By Application
10.10.4. By Sales Channel
10.11. Latin America Ferroelectric Random Access Memory Demand Share Forecast, 2019-2026
11. Europe Ferroelectric Random Access Memory Market Analysis and Forecast
11.1. Introduction
11.1.1. Basis Point Share (BPS) Analysis by Country
11.1.2. Y-o-Y Growth Projections by Country
11.1.3. Europe Average Pricing Analysis
11.2. Europe Ferroelectric Random Access Memory Market Size and Volume Forecast by Country
11.2.1. Germany
11.2.2. France
11.2.3. Italy
11.2.4. U.K.
11.2.5. Spain
11.2.6. Russia
11.2.7. Rest of Europe
11.3. Absolute $ Opportunity Assessment by Country
11.4. Europe Ferroelectric Random Access Memory Market Size and Volume Forecast by Application
11.4.1. Electronics
11.4.2. Aerospace
11.4.3. Others
11.5. Basis Point Share (BPS) Analysis by Application
11.6. Y-o-Y Growth Projections by Application
11.7. Europe Ferroelectric Random Access Memory Market Size and Volume Forecast by Type
11.7.1. 16K
11.7.2. 32K
11.7.3. 64K
11.7.4. Others
11.8. Basis Pont Share (BPS) Analysis by Type
11.9. Y-o-Y Growth Projections by Type
11.10. Market Attractiveness/Growth Potential Analysis
11.10.1. By Country
11.10.2. By Product Type
11.10.3. By Application
11.10.4. By Sales Channel
11.11. Europe Ferroelectric Random Access Memory Demand Share, 2019-2026
12. Asia Pacific Ferroelectric Random Access Memory Market Analysis and Forecast
12.1. Introduction
12.1.1. Basis Point Share (BPS) Analysis by Country
12.1.2. Y-o-Y Growth Projections by Country
12.1.3. Asia Pacific Average Pricing Analysis
12.2. Asia Pacific Ferroelectric Random Access Memory Market Size and Volume Forecast by Country
12.2.1. China
12.2.2. Japan
12.2.3. South Korea
12.2.4. India
12.2.5. Australia
12.2.6. Rest of Asia Pacific (APAC)
12.3. Absolute $ Opportunity Assessment by Country
12.4. Asia Pacific Ferroelectric Random Access Memory Market Size and Volume Forecast by Application
12.4.1. Electronics
12.4.2. Aerospace
12.4.3. Others
12.5. Basis Point Share (BPS) Analysis by Application
12.6. Y-o-Y Growth Projections by Application
12.7. Asia Pacific Ferroelectric Random Access Memory Market Size and Volume Forecast by Type
12.7.1. 16K
12.7.2. 32K
12.7.3. 64K
12.7.4. Others
12.8. Basis Point Share (BPS) Analysis by Type
12.9. Y-o-Y Growth Projections by Type
12.10. Market Attractiveness/Growth Potential Analysis
12.10.1. By Country
12.10.2. By Product Type
12.10.3. By Application
12.10.4. By Sales Channel
12.11. Asia Pacific Ferroelectric Random Access Memory Demand Share, 2019-2026
13. Middle East & Africa Ferroelectric Random Access Memory Market Analysis and Forecast
13.1. Introduction
13.1.1. Basis Point Share (BPS) Analysis by Country
13.1.2. Y-o-Y Growth Projections by Country
13.1.3. Asia Pacific Average Pricing Analysis
13.2. Middle East & Africa Ferroelectric Random Access Memory Market Size and Volume Forecast by Country
13.2.1. Saudi Arabia
13.2.2. South Africa
13.2.3. UAE
13.2.4. Rest of Middle East & Africa (MEA)
13.3. Absolute $ Opportunity Assessment by Country
13.4. Middle East & Africa Ferroelectric Random Access Memory Market Size and Volume Forecast by Application
13.4.1. Electronics
13.4.2. Aerospace
13.4.3. Others
13.5. Basis Point Share (BPS) Analysis by Application
13.6. Y-o-Y Growth Projections by Application
13.7. Middle East & Africa Ferroelectric Random Access Memory Market Size and Volume Forecast by Type
13.7.1. 16K
13.7.2. 32K
13.7.3. 64K
13.7.4. Others
13.8. Basis Point Share (BPS) Analysis by Type
13.9. Y-o-Y Growth Projections by Type
13.10. Market Attractiveness/Growth Potential Analysis
13.10.1. By Country
13.10.2. By Product Type
13.10.3. By Application
13.10.4. By Sales Channel
13.11. Middle East & Africa Ferroelectric Random Access Memory Demand Share, 2019-2026
14. Competition Landscape
14.1. Global Ferroelectric Random Access Memory Market: Market Share Analysis
14.2. Ferroelectric Random Access Memory Distributors and Customers
14.3. Ferroelectric Random Access Memory Market: Competitive Dashboard
14.4. Company Profiles (Details Overview, Financials, Developments, Strategy)
14.4.1. Cypress Semiconductor Corporations
14.4.1.1. Overview
14.4.1.2. Financials
14.4.1.3. Developments
14.4.1.4. Strategic Outlook
14.4.2. Texas Instruments
14.4.2.1. Overview
14.4.2.2. Financials
14.4.2.3. Developments
14.4.2.4. Strategic Outlook
14.4.3. International Business Machines
14.4.3.1. Overview
14.4.3.2. Financials
14.4.3.3. Developments
14.4.3.4. Strategic Outlook
14.4.4. Toshiba Corporation
14.4.4.1. Overview
14.4.4.2. Financials
14.4.4.3. Developments
14.4.4.4. Strategic Outlook
14.4.5. Infineon Technologies Inc
14.4.5.1. Overview
14.4.5.2. Financials
14.4.5.3. Developments
14.4.5.4. Strategic Outlook
14.4.6. LAPIS Semiconductor Co
14.4.6.1. Overview
14.4.6.2. Financials
14.4.6.3. Developments
14.4.6.4. Strategic Outlook
14.4.7. Fujitsu Ltd
14.4.7.1. Overview
14.4.7.2. Financials
14.4.7.3. Developments
14.4.7.4. Strategic Outlook
14.4.8. COMPANY8
14.4.8.1. Overview
14.4.8.2. Financials
14.4.8.3. Developments
14.4.8.4. Strategic Outlook
14.4.9. COMPANY9
14.4.9.1. Overview
14.4.9.2. Financials
14.4.9.3. Developments
14.4.9.4. Strategic Outlook
14.4.10. COMPANY 10
14.4.10.1. Overview
14.4.10.2. Financials
14.4.10.3. Developments
14.4.10.4. Strategic Outlook
14.4.11. COMPANY 11
14.4.11.1. Overview
14.4.11.2. Financials
14.4.11.3. Developments
14.4.11.4. Strategic Outlook
14.4.12. COMPANY 12
14.4.12.1. Overview
14.4.12.2. Financials
14.4.12.3. Developments
14.4.12.4. Strategic Outlook
14.4.13. COMPANY 13
14.4.13.1. Overview
14.4.13.2. Financials
14.4.13.3. Developments
14.4.13.4. Strategic Outlook
14.4.14. COMPANY 14
14.4.14.1. Overview
14.4.14.2. Financials
14.4.14.3. Developments
14.4.14.4. Strategic Outlook
14.4.15. COMPANY 15
14.4.15.1. Overview
14.4.15.2. Financials
14.4.15.3. Developments
14.4.15.4. Strategic Outlook
14.4.16. COMPANY 16
14.4.16.1. Overview
14.4.16.2. Financials
14.4.16.3. Developments
14.4.16.4. Strategic Outlook
14.4.17. COMPANY 17
14.4.17.1. Overview
14.4.17.2. Financials
14.4.17.3. Developments
14.4.17.4. Strategic Outlook
14.4.18. COMPANY 18
14.4.18.1. Overview
14.4.18.2. Financials
14.4.18.3. Developments
14.4.18.4. Strategic Outlook
14.4.19. COMPANY 19
14.4.19.1. Overview
14.4.19.2. Financials
14.4.19.3. Developments
14.4.19.4. Strategic Outlook
14.4.20. COMPANY 20
14.4.20.1. Overview
14.4.20.2. Financials
14.4.20.3. Developments
14.4.20.4. Strategic Outlook
